KIPE Magazine (전력전자학회지)

The Korean Institute of Power Electronics (전력전자학회)
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Cool SiCTM (SiC Mosfet)의 특징과 응용

  • 김창호 (인피니언 코리아 산업 전력 제어부)
  • Published : 2019.04.20
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Abstract

Keywords

References

  1. P. Friedrichs and M. Buschkuhle, "Future of power semiconductor, rugged and high performing silicon carbide transistors," in Bodo's power system, page 20-24, figure 6, Apr. 2016.
  2. M. Buschkuhle, F. Bjork, and P. Friedrichs, "$CoolSiC^{TM}$ mosfet revolution to relay on," in presentation file, May 2017.
  3. IKW40N120H3's data sheet.
  4. IMW120R045M1's data sheet.
  5. "SiC Mosfet's application" in 2018 KIPE industrial session presentation file.
  6. internet IPOSIM online simulation tool: https://iposim.infineon.com/application/en.
  7. "AN2018-09 guidelines for $CoolSiC^{TM}$ MOSFET gate drive voltage window SiC mosfet's application,"
  8. site: https://www.infineon.com/cms/en/product/power/wide-band-gap-semiconductors-sic-gan/silicon-carbide-sic/coolsic-mosfet/