Fig. 1. Cross sectional view of 4H-SiC ggNMOS. 그림 1. 4H-SiC ggNMOS의 단면도
Fig. 2. Equivalent circuit of 4H-SiC ggNMOS. 그림 2. 4H-SiC ggNMOS의 등가회로
Fig. 3. I-V Curve of 4H-SiC ggNMOS. 그림 3. 4H-SiC ggNMOS의 I-V 특성
Fig. 4. Variation of 4H-SiC ggNMOS. 그림 4. 4H-SiC ggNMOS의 설계변수
Fig. 5. I-V Curve of 4H-SiC ggNMOS with DCGS variation. 그림 5. 설계변수 DCGS에 따른 4H-SiC ggNMOS의 I-V 특성
Fig. 6. I-V Curve of 4H-SiC ggNMOS with Gate Length variation. 그림 6. 설계변수 Gate Length에 따른 4H-SiC ggNMOS의 I-V 특성
Table 1. Electrical characteristic with DCGS variation. 표 1. DCGS 변수에 따른 전기적 특성
Table 2. Electrical characteristic with Gate Length variation. 표 2. Gate Length 변수에 따른 전기적 특성
참고문헌
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