• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.63-67
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• 1992

Shallow $p^{+}-n,n^{+}-p$ diodes have been fabricated using rapid thermal diffusion by solid diffusion source and rapid thermal alloying with pure Aluminum. Diode area and junction depth are designed about 2.83$[\times}10^{-3}cm^{2}$ and 250nm, respectively. Electrical characteristics of $p^{+}-n$ diode show that the ideality factor is 1.04 and reverse current density is 29.3nA/$cm^{2}$, respectively. On the other hand, those of $n^{+}-p$ diode show that the ideality factor is 1.05 and reverse current density is 85.2pA/$cm^{2}$. The reverse currents are measured at 5V reverse bias after rapid thermal alloying for all the measurement.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.525-528
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• 2002

A Novel Zero Current Switching(ZCS) Pulse Width Modulation(PWM) boost converter for reducing two rectifiers reverse recovery related losses Is proposed. The switches of the proposed converter are operating to work alternatively turn-on and turn-off with soft switching(ZVS, ZCS) condition. The reverse recovery related switching losses and EMI problems of the proposed converter eliminates the reverse recovery current of the freewheeling diode(D, Dl) by adding the resonant inductor Lr, in series with the switch S2. The voltage and current stresses of the components are similar to those in its conventional hard switching counterpats. As mentioned above, the characteristics are verified through experimental results.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.806-808
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• 1993

New soft recovery drive which can alleviate the loss due to reverse recovery of diode is proposed. By using this drive, the reverse current of the diode is minimized and stabilized because there is inner local feedback loop between the turn-on current of the power MOSFET and the reverse recovery current of the diode. The loss and EMI noise can be considerably reduced in this way. Brief operational principle and experimental results are included to verify the usefulness.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.396-405
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• 2019

Single-phase full-bridge inverters have shoot-through problems. Dead time is an essential way of solving these issues, but it distorts the output voltage and current. Dual-buck inverters are designed to eliminate the abovementioned problems. However, these inverters result in switching power loss and electromagnetic interference due to the diode reverse-recovery problem. Previous studies have suggested reducing the switching power loss from diode reverse-recovery, but their proposed methods have complex circuit configurations and high system costs. To alleviate the switching power loss from diode reverse-recovery, the current work proposes a dual-buck inverter with a coupled inductor. In the structure of the proposed inverter, the current flowing into the original diode is divided into a new diode. Therefore, the switching power loss is reduced, and the efficiency of the proposed inverter is improved. Simulation waveforms and experimental results for a 1.0 kW prototype inverter are discussed to verify the performance of the proposed inverter.

• Journal of Korea Society of Industrial Information Systems
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• v.20 no.2
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• pp.97-111
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• 2015

In this paper, a methodology for effectively treating daily waste at D metropolitan city is considered using reverse logistics(RL) network. Currently, eight district offices at D metropolitan city are treating their daily wastes using each RL network. However, unfortunately, current method has a weakness such as inefficiency of RL network operation. Therefore, we propose a revised method for improving the inefficiency. In case study, we compare the performances of the current and revised methods using various real-life data. The analysis result shows that the revised method outperforms the current method.

• Membrane Journal
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• v.4 no.3
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• pp.142-151
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• 1994

Counter-current type reverse osmosis spiral wound module was manufactured for the separation and concentration of salf solution. The ratio of permeate volumetric flow rate vs. brine volumetric flow rate was effective parameter between rejection and degree of cocentration. The reflection coefficient was correspondent to the relation between rejection and degree of cocentration by Spiegler-Kedem model. Counter-current reverse osmosis process had more osmotic pressure drop effect and more degree of concentration than general reverse osmosis process. As a result of computer calculation, the extension of module length than module diameter was more effective for the increase of degree of concentration.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.942-943
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• 2008

The boost converter is usually used in power factor correction. The dynamic losses of its output diode are produced during the reverse recovery time. The power efficiency is decreased due to the losses and also it generates the noise. These disadvantages have been remarkably improved by ZCS and ZVS techniques of power factor improvement circuit. Some benefits lead to the achievement of higher power density and the development cost can be decreased. In this paper work, the reverse recovery suppression(RS) PFC method is used. A inductor and a diode are added into the conventional circuit. The switching device, MOSFET is turned off after the reverse recovery current has come to the zero level. The Zero Current Switching(ZCS) is implemented at that time. This power conversion technique improves the efficiency to about 1% and reduces the noise obviously. And the additional inductor can be designed using an original filter core in the circuit. The converter size is reduced effectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.3
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• pp.99-104
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• 2002

lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.4
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• pp.363-368
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• 2015

This paper deals with an improved current source using full-bridge converter type for thyristor valve test of HVDC system. The conventional high-current and low-voltage source of synthetic test circuit requires additional auxiliary power supply to provide the reverse voltage for the auxiliary thyristor valve during turn-off process. The proposed circuit diagram to provide the reverse voltage is extremely simple because no additional component is required. The reverse voltage can be obtained from the input DC voltage of the high-current and low-voltage power supply. The operation principle and design method of the proposed system are described. Simulation and experimental results in scaled down STC of 200 V, 30 A demonstrate the validity of the proposed scheme.

• ETRI Journal
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• v.39 no.6
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• pp.866-873
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• 2017

We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.