• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.316-321
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• 2002

In this Paper, the channel characteristics of the medium voltage(22.9kV) power line to analysis the broadband power line communication in the frequency range up to 30MHz was measured. With the sideband electrical coupler in the operating frequency range from DC to 30MHz, we measured characteristic impedance, noise and attenuation of the medium voltage power line, and then characteristic impedance was measured at the state of unloaded medium voltage power line by Scattering parameter method of Vector Network Analyzer. As a measurement result, Channel impedance shows 100~380$\Omega$ at the less than 15MHz and 70~230$\Omega$ at the more than 15 MHz. Noise characteristics of power line shows -75dBm at 20MHz and Narrowband interference noise was from 3 MHz to 7MHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.1
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• pp.110-115
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• 2000

A K-band GaAs MMIC receiver module has been developed using 0.15 ${\mu}{\textrm}{m}$ HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.9B
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• pp.1579-1587
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• 2000

This paper presents the properties of the RF part in the receiving system based in IMT-2000 terminal technology. It mainly discuss the RF parameter performance of the receiving system for mobile telecommunication comparable to IS-98A and J-STD-018 specifications of commercially available CDMA and PCS, and is to anticipate the processing gain of the IMT-2000 receiving system, processing gain according to data processing rate, and terminal noise figure according to processing gain, relationship between noise figures according to Eb/Nt, Ioc. It is performed by such analysis method as CDMA and PCS receiving systems. Transmission bandwidth is n$\times$1.25 MHz(n=1, 3, 6, 9, 12) which is recommended by Qualcomm and NTT, the leading company in cdma 2000. Data transmission rate of IMT-2000 is classified into three cases as in moving vehicle environment of 144Kbps, outdoor pedestrian environment of 384Kbps, and indoor office environment of 2Mbps

• Journal of electromagnetic engineering and science
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• v.9 no.1
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• pp.25-31
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• 2009

This paper describes CMOS VCO circuit design procedures and techniques for multi-band/multi-standard RF transceivers. The proposed techniques enable a 4 GHz CMOS VCO to satisfy all requirements for Quad-band GSMIEDGE and WCDMA standards by achieving a good trade-off among important specifications, phase noise, power consumption, modulation performance, and chip area efficiency. To meet the very stringent GSM T/Rx phase noise and wide frequency range specifications, the VCO utilizes bond-wire inductors with high-quality factor, an 8-bit coarse tune capbank for low VCO gain(30$\sim$50 MHz/V) and an on-chip $2^{nd}$ harmonic noise filter. The proposed VCO is implemented in $0.13{\mu}m$ CMOS technology. The measured tuning range is about 34 %(3.17 to 4.49 GHz). The VCO exhibits a phase noise of -123 dBc/Hz at 400 kHz offset and -145 dBc/Hz at 3 MHz offset from a 900 MHz carrier after LO chain. The calculated figure of merit(FOM) is -183.5 dBc/Hz at 3 MHz offset. This fully integrated VCO occupies $0.45{\times}0.9\;mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.2 s.332
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• pp.9-14
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• 2005

This paper reports the hot carrier induced RF performance degradation of bulk dynamic threshold voltage MOSFET (B-DTMOS) compared with bulk MOSFET (B-MOS). In the normal and moderate mode operations, the degradations of cut-off frequency $(f_{T})$ and minimum noise figure $(F_{min})$ of B-DTMOS are less significant than those of B-MOS devices. Our experimental results show that the RF performance degradation is more significant than the U performance degradation after hot carrier stressing. Also, the degradation characteristics of RF power Performance of B-DTMOS due to hot carrier effects are measured for the first time.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1205-1214
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• 2013

Recently spaceborne SAR systems are increasing image resolution and frequency. As a high quality image resolution, the wider bandwidth is required and a wideband signal generator with RF component is very complicated and RF impairments of device is increased. Therefore, it is very important to improve performance by reducing these errors. In this study, the transmission signal of the wideband signal generator is applied to the phase noise, IQ imbalance, ripple gain, nonlinear model of high power amplifier. And we define possible structures of wideband signal generator and measure the PSLR and ISLR for the performance assesment. Also, we extract error of the amplitude and phase from the waveform and use a quadratic polynomial curve fitting and examine the performance change due to nonlinear device. Finally, we apply a high power amplifier predistortion method for non-linear error compensation. And we confirm that distortion in the output of the amplifier by intermodulation component is decreased by 15 dB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.51-57
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• 2010

A dual-mode direct conversion receiver is developed in $0.13\;{\mu}m$ RF CMOS process for IEEE 802.11n based wireless LAN and IEEE 802.16e based mobile WiMAX application. The RF receiver covers the frequency band between 2.3 and 2.7 GHz. Three-step gain control is realized in LNA by using current steering technique. Current bleeding technique is applied to the down-conversion mixer in order to lower the flicker noise. A frequency divide-by-2 circuit is included in the receiver for LO I/Q differential signal generation. The receiver consumes 56 mA at 1.4 V supply voltage including all LO buffers. Measured results show a power gain of 32 dB, a noise figure of 4.8 dB, a output $P_{1dB}$ of +6 dBm over the entire band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.11
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• pp.1130-1137
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• 2009

This paper proposes a new clock routing design for suppressing clock harmonic effects in a Printed Circuit Board (PCB) for a terrestrial Digital Multimedia Broadcasting(DMB) system. Typical crystal reference frequencies that are widely used in DMB tuners are 16.384 MHz, 19.2 MHz, 24.576 MHz. When the high-order harmonic components of these reference frequencies fall near the RF channel frequencies, receiver sensitivity of the tuners is seriously degraded. In this work, we propose a new clock routing design in order to address the clock harmonic coupling issue. The proposed design incorporates two inductors for isolating the clock ground from the main ground, and adopts a new strip line-style routing instead of the conventional microstrip line style routing to minimize the overlap area with the main ground. As a result, the RF sensitivity of the T-DMB tuner is improved by 2 dB.

• The Journal of Korea Robotics Society
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• v.19 no.1
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• pp.98-105
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• 2024

This paper proposes a new approach with a distance-based regularization to the entropy applied to the NBV (Next-Best-View) selection with NeRF (Neural Radiance Fields). 3D reconstruction requires images from various viewpoints, and selecting where to capture these images is a highly complex problem. In a recent work, image acquisition was derived using NeRF's ray-based uncertainty. While this work was effective for evaluating candidate viewpoints at fixed distances from a camera to an object, it is limited when dealing with a range of candidate viewpoints at various distances, because it tends to favor selecting viewpoints at closer distances. Acquiring images from nearby viewpoints is beneficial for capturing surface details. However, with the limited number of images, its image selection is less overlapped and less frequently observed, so its reconstructed result is sensitive to noise and contains undesired artifacts. We propose a method that incorporates distance-based regularization into entropy, allowing us to acquire images at distances conducive to capturing both surface details without undesired noise and artifacts. Our experiments with synthetic images demonstrated that NeRF models with the proposed distance and entropy-based criteria achieved around 50 percent fewer reconstruction errors than the recent work.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.12
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• pp.57-63
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• 2016

This paper describes implementation of the RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4g SUN sensor node transceiver modules. Design of the each module like VCO, prescaler, 1/N divider, ${\Delta}-{\Sigma}$ modulator, and common circuits of the PLL has been optimized to obtain high speed and low noise performance. Especially, the VCO has been designed with NP core structure and 13 steps cap-bank to get high speed, low noise, and wide band tuning range. The output frequencies of the implemented synthesizer is 1483MHz~2017MHz, the phase noise of the synthesizer is -98.63dBc/Hz at 100KHz offset and -122.05dBc/Hz at 1MHz offset.