• 제목/요약/키워드: RF circuit model

검색결과 80건 처리시간 0.028초

RF MOSFET 을 위한 개선된 BSIM3v3 Macro 모델 (Improved BSIM3v3 Macro Model for RF MOSFETs)

  • 이용택;최문성;김종혁;이성현
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.675-678
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    • 2005
  • An improved BSIM3v3 RF Macro model with RC parallel substrate circuit has been developed to simulate RF characteristics of the output admittance in MOSFET accurately. This improved model shows better agreements with measured $Y_{22}-parameter$ up to 10 GHz than conventional one with a single substrate resistance, verifying the accuracy of the improved one.

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RF대역에서의 반도체 package 특성 측정에 관한 연구 (A Study on Measurement of Semiconductor Package in RF Regime)

  • 박현일;김기혁;황성우
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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    • pp.108-111
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    • 2000
  • The electrical characteristics of MQFP packages have been measured in RF regime. The s-parameter of the lead frame has been measured using the test fixture on which the do-capped package was mounted. A simple lumped equivalent circuit modeling of the lead frame and the test fixture can provide reasonable model parameters up to the frequency of 200 MHz.

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Accurate Non-Quasi-Static Gate-Source Impedance Model of RF MOSFETs

  • Lee, Hyun-Jun;Lee, Seonghearn
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권6호
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    • pp.569-575
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    • 2013
  • An improved non-quasi-static gate-source impedance model including a parallel RC block for short-channel MOSFETs is developed to simulate RF MOSFET input characteristics accurately in the wide range of high frequency. The non-quasi-static model parameters are accurately determined using the physical input equivalent circuit. This improved model results in much better agreements between the measured and modelled input impedance than a simple one with a non-quasi-static resistance up to 40GHz, verifying its accuracy.

RF CMOS 소자 내부 등가회로 파라미터의 게이트길이에 대한 종속성 (Gate Length Dependence of Intrinsic Equivalent Circuit Parameters for RF CMOS Devices)

  • 최문성;이용택;이성현
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.505-508
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    • 2004
  • Gate length dependent data of intrinsic MOSFET equivalent circuit parameters are extracted using a direct extraction technique based on simple 2-port parameter equations. The relatively scalable data with respect to gate length are obtained. These data are verified to be acrurate by observing good correspondence between modeled and measured S-parameters up to 30GHz. These data will be helpful to construct RF scalable MOSFET model.

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An Efficient Multipaction Analysis of an Output Multiplexer for Satellite Applications

  • Uhm Man Seok;Lee Juseop;Yom In-Bok;Kim Jeong-Phill
    • Journal of electromagnetic engineering and science
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    • 제5권4호
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    • pp.176-182
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    • 2005
  • In this paper, an efficient multipaction analysis method of a manifold multiplexer for satellite applications is presented. While FEM(Finite Element Method) is used for the multipaction analysis of the lowpass filter, the equivalent circuit model is used for the analysis of the channel filters and the manifold. Employing equivalent circuit model for multipaction analysis takes less time than using EM(Electromagnetic) field analysis method while keeping the accuracy of the multipaction analysis. This present analysis method is applied to the manifold multiplexer for Ka-band satellite transponders and the results show that the present method is as accurate as the conventional EM field analysis method.

RF 회로 설계를 위한 실리콘 기판 커플링 모델링, 해석 및 기판 파라미터 추출 (Silicon Substrate Coupling Modeling, Analysis, and Substrate Parameter Extraction Method for RF Circuit Design)

  • 진우진;어영선;심종인
    • 대한전자공학회논문지TC
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    • 제38권12호
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    • pp.49-57
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    • 2001
  • 이 논문에서는 실리콘 기판 등가 회로 모델과 새로운 모델 파라미터 추출 방법을 보인다. 등가 회로 모델을 해석함으로써 회로 블록 사이의 기판 커플링 특성을 고찰하고, 커플링의 크기를 회로 동작 주파수와 특성 주파수(시스템의 폴과 제로 주파수)를 사용하여 분석함으로써 기판 커플링의 물리적 특성을 정량적으로 해석하였다. 제안된 등가회로 모델과 모델 파라미터 추출 방법의 정확성과 타당성을 실험적으로 검증하기 위하여 표준 CMOS 공정을 사용하여 다양한 거리와 기판 저항, 그리고 가드링 구조를 갖는 테스트 패턴을 설계, 제작하고 100 MHz-20 GHz 주파수 영역에서 측정하였다. 그리고 실리콘 기판 등가 회로 모델 을 사용하여 HSPICE를 사용하여 시뮬레이션하고 그 결과를 측정 결과와 비교함으로써 제안된 회로 모델과 파라미터 추출 방법의 정확성을 보였다. 따라서 등가 회로 모델과 파라미터 추출 방법은 정확한 혼성 신호 회로 디자인과 효과적인 시스템의 성능 검증에 유용하게 사용될 수 있다.

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Investigation of a Method for RF Circuits Analysis Based on Electromagnetic Topology

  • Park, Yoon-Mi;Chung, Young-Seek;Cheon, Chang-Yul;Jung, Hyun-Kyo
    • Journal of Electrical Engineering and Technology
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    • 제4권3호
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    • pp.396-400
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    • 2009
  • In this paper, electromagnetic topology (EMT) was used to analyze the electromagnetic compatibility (EMC) of RF circuits including passive and active components. It is difficult to obtain usable results for problems relating to electromagnetic coupling in complex systems when using conventional numerical or experimental methods. Thus it is necessary to find a new methodology for analyzing EMC problems in complicated electromagnetic environments. In order to consider the nonlinear characteristics of active components, a SPICE diode model was used. A power detector circuit and the receiver circuit of a radio control (RC) car were analyzed and experimented in order to verify the validity of this method.

RF 트랜스포머를 사용한 광대역 전력증폭기 설계 (Broadband power amplifier design utilizing RF transformer)

  • 김욱현;우제욱;전주영
    • 전기전자학회논문지
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    • 제26권3호
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    • pp.456-461
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    • 2022
  • 본 논문에서는 차동 증폭기에 필수적으로 필요한 Radio frequency(RF) transformer(TF)을 활용하여 광대역 이득 특성을 가지는 2단 단일 종단 전력증폭기를 제시하였다. RF TF의 특징을 파악하고 광대역 특성을 가지도록 설계한 뒤 2단 전력증폭기의 단간(inter-stage) 임피던스 정합 회로에 적용함으로써 증폭기의 대역폭을 향상시킬 수 있다. 기존의 2단 단일 종단(Single-ended) 증폭기의 성능과 면적을 유지하면서 광대역 이득 특성을 얻을 수 있도록 단간 정합 회로를 Monolithic Microwave Integrated Circuit (MMIC)와 다층 PCB에 구현하고 시뮬레이션을 통해 결과를 비교하였다. InGaP/GaAs HBT 모델을 사용하여 설계한 2단 전력증폭기 모듈을 시뮬레이션 한 결과 중심주파수 3.3GHz에서 기존의 전력증폭기가 11.2%의 fractional 대역폭을 보인 반면 제안된 설계 기법을 적용한 전력증폭기는 19.8%의 개선된 대역폭을 가짐을 확인하였다.

Analytical Noise Parameter Model of Short-Channel RF MOSFETs

  • Jeon, Jong-Wook;Park, Byung-Gook;Lee, Jong-Duk;Shin, Hyung-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권2호
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    • pp.88-93
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    • 2007
  • In this paper, a simple and improved noise parameter model of RF MOSFETs is developed and verified. Based on the analytical model of channel thermal noise, closed form expressions for four noise parameters are developed from proposed equivalent small signal circuit. The modeling results show a excellent agreement with the measured data of $0.13{\mu}m$ CMOS devices.

Negative Dynamic Resistance and RF Amplification in Magnetic Tunnel Junctions

  • Tomita, Hiroyuki;Maehara, Hiroki;Nozaki, Takayuki;Suzuki, Yoshishige
    • Journal of Magnetics
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    • 제16권2호
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    • pp.140-144
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    • 2011
  • We report on a numerical calculation study of two new functional properties in magnetic tunnel junctions (MTJs), negative dynamic resistance and RF amplification. The magnetic dynamics in a conventional CoFeB/MgO/CoFeB MTJ with in-plane magnetization was investigated using a macro-spin model simulation. To examine the influence of thermal fluctuations, random external magnetic fields were also included. Using a voltage controlled bias circuit, the negative dynamic resistance was obtained from time averaged I-V characteristics at both 0 K and 300 K under appropriate external magnetic fields and bias voltages. Using this negative dynamic resistance property, we demonstrated RF amplification with a 100 MHz high frequency signal. Sizable RF amplification gain was observed without thermal fluctuation. However, at 300 K, the RF signal was not amplified because low frequency magnetization dynamics were dominant.