Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Improved BSIM3v3 Macro Model for RF MOSFETs

RF MOSFET 을 위한 개선된 BSIM3v3 Macro 모델

  • 이용택 (한국외국어대학교 전자정보공학과) ;
  • 최문성 (한국외국어대학교 전자정보공학과) ;
  • 김종혁 (한국외국어대학교 전자정보공학과) ;
  • 이성현 (한국외국어대학교 전자정보공학과)
  • Published : 2005.11.26
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Abstract

An improved BSIM3v3 RF Macro model with RC parallel substrate circuit has been developed to simulate RF characteristics of the output admittance in MOSFET accurately. This improved model shows better agreements with measured $Y_{22}-parameter$ up to 10 GHz than conventional one with a single substrate resistance, verifying the accuracy of the improved one.

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