JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Accurate Non-Quasi-Static Gate-Source Impedance Model of RF MOSFETs

  • Lee, Hyun-Jun (Department of Electronic Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seonghearn (Department of Electronic Engineering, Hankuk University of Foreign Studies)
  • Received : 2013.05.10
  • Accepted : 2013.10.05
  • Published : 2013.12.31
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Abstract

An improved non-quasi-static gate-source impedance model including a parallel RC block for short-channel MOSFETs is developed to simulate RF MOSFET input characteristics accurately in the wide range of high frequency. The non-quasi-static model parameters are accurately determined using the physical input equivalent circuit. This improved model results in much better agreements between the measured and modelled input impedance than a simple one with a non-quasi-static resistance up to 40GHz, verifying its accuracy.

Keywords

References

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