• Title/Summary/Keyword: Power Amplifier Integrated Circuit

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Design of a LDO regulator with a protection Function using a 0.35 µ BCD process (0.35 ㎛ BCD 공정을 이용한 보호회로 기능이 추가된 모바일용 LDO 레귤레이터)

  • Lee, Min-Ji;Son, Hyun-Sik;Park, Young-Soo;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.1
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    • pp.627-633
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    • 2015
  • We designed of a LDO regulator with a OVP and UVLO protection function for a PMIC. Proposed LDO regulator circuit consists of a BGR reference circuit, an error amplifier and a power transistor and so on. The proposed LDO regulator is designed for low voltage input power protection. Proposed LDO circuit generated fixed 2.5 V from a supply of 3.3V. It was designed with 3.3 V power supply using a $0.35{\mu}m$ CMOS technology. SPICE simulation results showed that the proposed circuit provides 0.713 mV/V line regulation with output 2.5 V ~ 3.9 V and $8.35{\mu}V/mA$ load regulation with load current 0 mA to 40 mA.

Some Device Design Considerations to Enhance the Performance of DG-MOSFETs

  • Mohapatra, S.K.;Pradhan, K.P.;Sahu, P.K.
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.6
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    • pp.291-294
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    • 2013
  • When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

A 3-5 GHz Non-Coherent IR-UWB Receiver

  • Ha, Min-Cheol;Park, Young-Jin;Eo, Yun-Seong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.4
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    • pp.277-282
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    • 2008
  • A fully integrated inductorless CMOS impulse radio ultra-wideband (IR-UWB) receiver is implemented using $0.18\;{\mu}m$ CMOS technology for 3-5 GHz application. The UWB receiver adopts the non-coherent architecture, which removes the complexity of RF architecture and reduces power consumption. The receiver consists of inductorless differential three stage LNA, envelope detector, variable gain amplifier (VGA), and comparator. The measured sensitivity is -70 dBm in the condition of 5 Mbps and BER of $10^{-3}$. The receiver chip size is only $1.8\;mm\;{\times}\;0.9\;mm$. The consumed current is 15 mA with 1.8 V supply.

Optimization of Low Power CMOS Baseband Analog Filter-Amplifier Chain for Direct Conversion Receiver

  • Lee, Min-Kyung;Kwon, Ick-Jin;Lee, Kwy-Ro
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.3
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    • pp.168-173
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    • 2004
  • A low power CMOS receiver baseband analog circuit based on alternating filter and gain stage is reported. For the given specifications of the baseband analog block, optimum allocation of the gain, IIP3 and NF of the each block was performed to minimize current consumption. The fully integrated receiver BBA chain is fabricated in $0.18\;{\mu}m$ CMOS technology and IIP3 of 30 dBm with a gain of 55 dB and noise figure of 31 dB are obtained at 4.86 mW power consumption.

Novel Current Stress Reduction Technique for Boost Integrated Half-Bridge DC/DC Converter with Voltage Doubler Type Rectifier (전압 체배 정류단을 갖는 부스트 입력형 하프브리지 DC/DC 컨버터를 위한 새로운 전류 스트레스 저감 기법)

  • Park Hong-Sun;Kim Chong-Eun;Moon Gun-Woo
    • Proceedings of the KIPE Conference
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    • 2006.06a
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    • pp.39-42
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    • 2006
  • a current stress reduction technique for a boost integrated half-bridge (BIHB) DC/DC converter with voltage doubler type rectifier is proposed for digital car audio amplifier application. In the proposed circuit, two external capacitors are added parallel to the rectifier diodes in the secondary side of the transformer to shape the primary and the secondary current like rectangular waveforms in every switching instance. The experimental results of a 200W industrial sample show that the peak primary current decreases about by 10A. Thus, the proposed technique shows improved high efficiency.

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Design of a Low Drop-out Regulator with a UVLO Protection Function (UVLO 보호기능이 추가된 LDO 레귤레이터 설계)

  • Park, Won Kyeong;Lee, Su Jin;Park, Yong Su;Song, Han Jung
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.10
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    • pp.239-244
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    • 2013
  • This paper presents a design of the CMOS LDO regulator with a UVLO protection function for a high speed PMIC. Proposed LDO regulator circuit consists of a BGR reference circuit, an error amplifier and a power transistor and so on. UVLO block between the power transistor and the power supply is added for a low input protection function. Also, UVLO block showed normal operation with turn-off voltage of 2.7V and turn-on voltage of 4 V in condition of 5 V power supply. Proposed circuit generated fixed 3.3 V from a supply of 5V. From SPICE simulation results using a $1{\mu}m$ high voltage CMOS technology, simulation results were 5.88 mV/V line regulation and 27.5 uV/mA load regulation with load current 0 mA to 200 mA.

A Multi-purpose Fingerprint Readout Circuit Embedding Physiological Signal Detection

  • Eom, Won-Jin;Kim, Sung-Woo;Park, Kyeonghwan;Bien, Franklin;Kim, Jae Joon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.793-799
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    • 2016
  • A multi-purpose sensor interface that provides dual-mode operation of fingerprint sensing and physiological signal detection is presented. The dual-mode sensing capability is achieved by utilizing inter-pixel shielding patterns as capacitive amplifier's input electrodes. A prototype readout circuit including a fingerprint panel for feasibility verification was fabricated in a $0.18{\mu}m$ CMOS process. A single-channel readout circuit was implemented and multiplexed to scan two-dimensional fingerprint pixels, where adaptive calibration capability against pixel-capacitance variations was also implemented. Feasibility of the proposed multi-purpose interface was experimentally verified keeping low-power consumption less than 1.9 mW under a 3.3 V supply.

A Reconfigurable Analog Front-end Integrated Circuit for Medical Ultrasound Imaging Systems (초음파 의료 영상 시스템을 위한 재구성 가능한 아날로그 집적회로)

  • Cha, Hyouk-Kyu
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.12
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    • pp.66-71
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    • 2014
  • This paper presents an analog front-end integrated circuit (IC) for medical ultrasound imaging systems using standard $0.18-{\mu}m$ CMOS process. The proposed front-end circuit includes the transmit part which consists of 15-V high-voltage pulser operating at 2.6 MHz, and the receive part which consists of switch and a low-power low-noise preamplifier. Depending on the operation mode, the output driver in the transmit pulser can be reconfigured as the switch in the receive path and thus the area of the overall front-end IC is reduced by over 70% in comparison to previous work. The designed single-channel front-end prototype consumes less than $0.045mm^2$ of core area and can be utilized as a key building block in highly-integrated multi-array ultrasound medical imaging systems.

Design of a CCM/DCM dual mode DC-DC Buck Converter with Capacitor Multiplier (커패시터 멀티플라이어를 갖는 CCM/DCM 이중모드 DC-DC 벅 컨버터의 설계)

  • Choi, Jin-Woong;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.9
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    • pp.21-26
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    • 2016
  • This paper presents a step-down DC-DC buck converter with a CCM/DCM dual-mode function for the internal power stage of portable electronic device. The proposed converter that is operated with a high frequency of 1 MHz consists of a power stage and a control block. The power stage has a power MOS transistor, inductor, capacitor, and feedback resistors for the control loop. The control part has a pulse width modulation (PWM) block, error amplifier, ramp generator, and oscillator. In this paper, an external capacitor for compensation has been replaced with a multiplier equivalent CMOS circuit for area reduction of integrated circuits. In addition, the circuit includes protection block, such as over voltage protection (OVP), under voltage lock out (UVLO), and thermal shutdown (TSD) block. The proposed circuit was designed and verified using a $0.18{\mu}m$ CMOS process parameter by Cadence Spectra circuit design program. The SPICE simulation results showed a peak efficiency of 94.8 %, a ripple voltage of 3.29 mV ripple, and a 1.8 V output voltage with supply voltages ranging from 2.7 to 3.3 V.

A Design of Power Management IC for CCD Image Sensor (CCD 이미지 센서용 Power Management IC 설계)

  • Koo, Yong-Seo;Lee, Kang-Yoon;Ha, Jae-Hwan;Yang, Yil-Suk
    • Journal of IKEEE
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    • v.13 no.4
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    • pp.63-68
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    • 2009
  • The power management integrated circuit(PMIC) for CCD image sensor is presented in this study. A CCD image sensor is very sensitive against temperature. The temperature, that is heat, is generally generated by the PMIC with low efficiency. Since the generated heat influences performance of CCD image sensor, it should be minimized by using a PMIC which has a high efficiency. In order to develop the PMIC with high efficiency, the input stage is designed with synchronous type step down DC-DC converter. The operating range of the converter is from 5V to 15V and the converter is controlled using PWM method. The PWM control circuit consists of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit. The saw-tooth generator is designed with 1.2MHz oscillation frequency. The comparator is designed with the two stages OP Amp. And the error amplifier has 40dB DC gain and $77^{\circ}$ phase margin. The output of the step down converter is connected to input stage of the charge pump. The output of the charge pump is connected to input of the LDO which is the output stage of the PMIC. Finally, the PMIC, based on the PWM control circuit and the charge pump and the LDO, has output voltage of 15V, -7.5V, 3.3V and 5V. The PMIC is designed with a 0.35um process.

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