• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.545-545
• /
• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.561-562
• /
• 2006

The purpose of this study was to investigate the root cause of adhesion of silica and ceria particles during Poly-Si, TEOS, and SiN CMP process, respectively. The zeta-potentials of abrasive particles and wafers were observed negative surface charges in the alkaline solutions. SAC and STI patterned wafers have intermediate values of their composition surface's zeta potentials. The theoretical interaction force and adhesion force of silica and ceria particle were calculated in solution with acidic, neutral and alkaline pH. A stronger attractive force was calculated for silica and ceria particles on wafers in acidic solutions than in alkaline solutions. The theoretical interaction forces of the SAC and STI patterned wafers have intermediate values of their constitution wafer's values. The adhesion forces is observed lower values in alkaline solutions than in acidic solutions. And the ceria particle has lower adhesion than that of the silica particle.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.11a
• /
• pp.14.1-14.1
• /
• 2007

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2006.05a
• /
• pp.19.1-19.1
• /
• 2006

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.4
• /
• pp.157-162
• /
• 2006

Chemical-mechanical polishing (CMP), one of the dominant technology for ULSI planarization, is used to flatten the micro electro-mechanical systems (MEMS) structures. The objective of this paper is to achieve good planarization of the deposited film and to improve deposition efficiency of subsequent layer structures by using surface-micromachining process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages of CMP process for MEMS structures are observed respectively by using the test patterns with structures larger than 1 urn line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of silica slurries: $ILD1300^{TM}\;and\;Nalco2371^{TM}$. And then, the experiments were conducted based on the pretest. A selectivity and pH adjustment of slurry affected largely step heights of MEMS structures. These results would be anticipated as an important bridge stone to manufacture MEMS CMP slurry.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.3
• /
• pp.112-117
• /
• 2006

In this paper we present that the effects of polymer adsorption on stabilities and CMP performance of ceria abrasive particles. Characterization of ceria abrasive particles in the presence of poly(vinyl pyrrolidone) (PVP) was performed by the measurements of adsorbed amounts of PVP, average sizes, and the back scattering intensities of the ceria abrasive particles as functions of PVP molecular weight and PVP concentration. The ceria abrasive particles in the presence of PVP were used to polish $SiO_2\;and\;Si_3N_4$ films deposited on Si wafers in order to understand the effect of PVP adsorption on chemical mechanical polishing (CMP) performance, together with ceria abrasive particles without PVP. Adsorption of PVP on the ceria abrasive particles enhanced the stability of ceria abrasive particles due to steric stabilization of the thick adsorbed layer of PVP. Removal rates of the deposited $SiO_2\;and\;Si_3N_4$ films by the ceria abrasive particles in the presence of PVP were much lower than those in the absence of PVP and their magnitudes were decreased with an increase in the concentration of free PVP chains in the dispersion media. This suggests that the CMP performance in the presence of PVP could be mainly controlled by the hydrodynamic interactions between the adsorbed PVP chains and the free ones. Moreover, the molecular weight dependence of PVP on the removal rates of the deposited films was hardly observed. On the other hand, high removal rate selectivity between the deposited films in the presence of PVP was not observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.3
• /
• pp.234-239
• /
• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2006.05a
• /
• pp.481-482
• /
• 2006

Chemical-mechanical polishing, the dominant technology for LSI planarization, is trending to play an important function in micro-electro mechanical systems (MEMS). However, MEMS CMP process has a couple of different characteristics in comparison to LSI device CMP since the feature size of MEMS is bigger than that of LSI devices. Preliminary CMP tests are performed to understand material removal rate (MRR) with blanket wafer under a couple of polishing pressure and velocity. Based on the blanket CMP data, this paper focuses on the consumable approach to enhance MEMS CMP by the adjustment of slurry and pad. As a mechanical tool, newly developed microstructured (MS) pad is applied to compare with conventional pad (IC 1400-k Nitta-Haas), which is fabricated by micro melding method of polyurethane. To understand the CMP characteristics in real time, in-situ friction force monitoring system was used. Finally, the topography change of poly-si MEMS structures is compared according to the pattern density, size and shape as polishing time goes on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.362-363
• /
• 2005

The objectives of this paper are to achieve good planarization of the deposited film and to improve deposition efficiency of multi-layer structures by using surface-micromaching process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages and disadvantages of CMP for MEMS structures are observed respectively by using the test patterns with structures larger than 1 um line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of slurries: ILD1300 and Nalco2371. And then, the experiments were conducted based on the pretest.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.1296-1299
• /
• 2004

MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.