• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.7
• /
• pp.656-661
• /
• 2005

The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.

• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.503-504
• /
• 2008

ZnO thin films were deposited on glass and plastic substrates at different $Ar/O_2$ gas flow ratio in RF magnetron sputtering system. To investigate structural and optical properties of ZnO thin films, X-ray Diffactometer and UV-Vis Spectrometer were performed, respectively. The obtained films showed a preferred orientation the c-axis perpendicular to the substrate and transmittance above 80 % in visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.6
• /
• pp.481-485
• /
• 2012

ZnO nanowires were synthesized by hydrothermal technique. Prepared synthesis aqueous solutions were preserved by preheating in autoclave type synthesis equipment with various preheating time of 1 h difference. ITO-coated corning glass substrates deposited with AZO seed layers were then inserted in the preheated synthesis aqueous solutions and ZnO nanowires were grown for 180 min at $90^{\circ}C$. Density, length and aspect ratio of the grown ZnO nanowires were investigated. Composition, structural and optical properties of the grown ZnO nanowires were analyzed. Characteristics of the ZnO nanowires were comparatively studied in relation with $Zn^{2+}$ ion concentration measured directly after the preheating of synthesis aqueous solution.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.634-634
• /
• 2013

Transfer molding methods have a problem that weak adhesion between nanostructures and substrates. It is important to make various nano scale applications, also the stability of nanostructure on substrate is related with device performance. We studied an effect of poly 4-vinylphenol (PVP) as the polymeric adhesion layer between organic nanowires and a Si substrate when the nanowires are transferred by liquid-bridge-mediated nanotransfer molding method (LB-nTM). Their structural stability was examined by optical microscopy, scanning electron microscopy as multiple transfer molding and washing process. Field-effect transistors were fabricated with organic semiconductor nanowires on a polymeric adhesion layer and their electrical properties showed no significant difference as the one without the adhesion layer. As a result, adhesion layer can be used in the washing process and making multi-layer nano-scale patterns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.200-202
• /
• 2004

ZnO thin films were grown at different plume-substrate angles by pulsed laser deposition(PLD). From the X-ray diffraction(XRD) result, all ZnO thin films were found to be well c-axis oriented and c-axis lattice constant approached the value of bulk ZnO as plume-substrate(P-S) angle decreased. The grain size of ZnO thin films measured by atomic force microscopy increased and the UV intensity of ZnO thin films investigated by photoluminescence increased as P-S angle decreased. It is found that the improvement of structural and optical properties mainly comes from the reduction of the flux of ablated species arriving on a substrate per a laser shot by tilting a substrate parallel to the plume propagation direction.

• 한국신재생에너지학회:학술대회논문집
• /
• 2006.06a
• /
• pp.162-165
• /
• 2006

AZO (ZnO:Al) were fabricated by RF magnetron sputtering In $H_2/Ar(5%\;H_2)$ atmosphere, and structural, electrical and optical properties were investigated. The substrate temperatures were varied at RT, $100^{\circ}C,\;150^{\circ}C$ and$200^{\circ}C$. The resistivity of the films grown in $H_2/Ar(5%\;H_2)$ were reduced from $7.67{\times}10^{-4}{\Omega}\;cm$ to $5.95{\times}10^{-4}{\Omega}\;cm$ comparing that Ar (100%) and the transmittance of the ZnO:Al films in the visible range was 85%.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• 2000.11a
• /
• pp.36-39
• /
• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evalulate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to charactrize the surface states. A qualitative analysis of the proposed measuremen is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1268_1269
• /
• 2009

This work shows the effect of rapid thermal annealing (RTA) on properties of indium-zinc oxide (IZO) thin films. The RTA temperatue was controlled between 300 and $500^{\circ}C$ under the two different ambient conditions such as vacuum and oxygen. Structural, optical, and electrical properties of IZO films were characterized in terms of RTA conditions. XRD and resistivity measurements showed that crystallization for IZO films occurred at an RTA temperature of about $400^{\circ}C$. For the IZO film treated at $500^{\circ}C$ of RTA, the resistivity, carrier concentration, hall mobility, and transmittance were approximately $10^2{\Omega}cm$, $10^{15}cm^{-3}$, $10cm^2/V{\cdot}s$, and 85%, respectively, which would be suitable for its application to the channel layer in transparent thin film transistors.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.10
• /
• pp.2909-2912
• /
• 2010

Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.36-39
• /
• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evaluate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to characterize the surface states. A qualitative analysis of the proposed measurement is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.