Characteristics of ZnO:Al Thin Films for TCO Prepared by RE Magnetron Sputtering in $H_2/Ar$ Atmosphere

$H_2/Ar$분위기에서 제조한 투명전극용 ZnO:Al 박막의 특성

  • 탁성주 (고려대학교 신소재공학과) ;
  • 이정섭 (고려대학교 신소재공학과) ;
  • 김원목 (한국과학기술연구원 박막재료 연구센터) ;
  • 김동환 (고려대학교 신소재공학과)
  • Published : 2006.06.22

Abstract

AZO (ZnO:Al) were fabricated by RF magnetron sputtering In $H_2/Ar(5%\;H_2)$ atmosphere, and structural, electrical and optical properties were investigated. The substrate temperatures were varied at RT, $100^{\circ}C,\;150^{\circ}C$ and$200^{\circ}C$. The resistivity of the films grown in $H_2/Ar(5%\;H_2)$ were reduced from $7.67{\times}10^{-4}{\Omega}\;cm$ to $5.95{\times}10^{-4}{\Omega}\;cm$ comparing that Ar (100%) and the transmittance of the ZnO:Al films in the visible range was 85%.

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