Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of the Gas Atmosphere of ZnO Buffer Layers in the ZnO films grown on Si Substrates by RF Magnetron Sputtering

RF 스퍼터링으로 Si 기판위에 제작된 ZnO 박막에서 ZnO 버퍼층의 가스분위기 영향

  • Published : 2005.07.01
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Abstract

The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.

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References

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