• Journal of applied mathematics & informatics
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• v.31 no.3_4
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• pp.399-416
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• 2013

The semilocal convergence of a third order iterative method used for solving nonlinear operator equations in Banach spaces is established by using recurrence relations under the assumption that the second Fr´echet derivative of the involved operator satisfies the ${\omega}$-continuity condition given by $||F^{\prime\prime}(x)-F^{\prime\prime}(y)||{\leq}{\omega}(||x-y||)$, $x,y{\in}{\Omega}$, where, ${\omega}(x)$ is a nondecreasing continuous real function for x > 0, such that ${\omega}(0){\geq}0$. This condition is milder than the usual Lipschitz/H$\ddot{o}$lder continuity condition on $F^{\prime\prime}$. A family of recurrence relations based on two constants depending on the involved operator is derived. An existence-uniqueness theorem is established to show that the R-order convergence of the method is (2+$p$), where $p{\in}(0,1]$. A priori error bounds for the method are also derived. Two numerical examples are worked out to demonstrate the efficacy of our approach and comparisons are elucidated with a known result.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.194-199
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• 1997

We fabricated MIM (Metal-Insulator-Metal) antifuses with Al/a-Si/Mo structure and then examined the I-V characteristics and on-state resistance distribution of antifuses. The leakage current of antifuses is below $1Pa/{\mu}m^2$, and programming voltage lies within 10 to 11 V. After programming, on-resistance of antifuses is mostly 10-20$\Omega$ and 20% of these have above 100$\Omega$. In order to reduce on-resistance and the deviation of this distribution, we tried to inject current again into already programed antifuses (we call this re-programming method). From this method, the resistance of antifuses with above 100Ω can be reduced to below 50$\Omega$. When antifuses are programmed by re-programming method, these antifuses have more uniform and lower on-resistance than programmed with one-pulse.

• Journal of Astronomy and Space Sciences
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• v.5 no.2
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• pp.111-122
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• 1988

The short and long periodic perturbations and secular perturbation due to the geopotentials of degree $J_2$ and $J_3$ which affect orbital elements of a near-circular orbiting satellite are obtained by the analytical method. The singular points due to a small denominator e in the perturbation equations can be excluded using one of the methods introduced by Taff(1985), which substitutes $e_s=esin\omega,\;e_c=ecos\omega\;and\;\ell=\omega+M$ for the orbital elements e, $\omega$ and M. We determined the mean orbital elements of the meteorological satellite NOAA-10 using the Walter (1967)'s iterative procedure and compared with Brouwer's mean orbital elements determined at NASA. The mean orbital elements a, ⅰand $\Omega$ are consistent with those of NASA but the mean orgital elements e, $\omega$ and M have some deviations from those of NASA. According to the our results, it is not suitable for the polar orbiting satellites to use the Taff's proposal for excluding the singular points, which substitutes e, $\omega$ and M by $e_s=esin(\Omega+\omega),\;e_c=ecos(\Omega+\omega)\;and\;L=\Omega+\omega+M$.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2171-2176
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• 2007

The 3-omega (3-${\omega}$) method is utilized to measure the thermal conductivity of nanofluids. A metal line heater on a silicon nitride membrane bridge structure is microfabricated by a bulk silicon etching method. Localized measurement of the thermal conductivity within the nanofluids droplet is possible by the fabricated 3-${\omega}$ sensor. Time varying AC temperature amplitudes and thermal conductivities are measured to check the stability of the nanofluids containing multi-wall carbon nanotubes (MWCNTs). Stabilities of MWCNT nanofluids prepared with different chemical treatments are compared. Acid treated MWCNT showed best dispersion stability in water while MWCNTs dispersed in water with surfactants such as Gum Arabic and Sodium dodecyl benzene sulfate showed clear sign of gravity dependence.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.9
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• pp.470-474
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• 2004

Both ratio error and phase angle error in voltage transformer(VT) depend on values of burden of VT used. A method of evaluation for linearity of ratio error and phase angle error in VT measurement equipment have been developed using the standard resistance burdens, with negligible AC-DC resistance difference less than $10^-6$. These burden consists of five standard resistors, with nominal resistance of 100 $\Omega$, 1 k$\Omega$, 10 k$\Omega$, 100 k$\Omega$, and 1 M$\Omega$. The developed method has been applied in VT measurement equipment of industry and the validity of the developed method has been verified by showing the consistency of the result of linearity obtained using VT with wide ratio error.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.49-52
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• 1989

Some limits are in two-dimensional analysis by finite element method to electromagnetic machine having finite dimension. Therefore three-dimensional analysis by finite element method, which are modeling original form of models are needed in order to gain accurate solutions. This paper present three-dimensional time varing magnetic field analysis method using electric field E and magnetic scarlar potential $\Omega$, and examine sample model.

• Communications of the Korean Mathematical Society
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• v.9 no.2
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• pp.467-489
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• 1994

Let $\Omega$ be a closed and bounded polygonal domain in R$^2$, or a closed line segment in R$^1$ with boundary $\Gamma$, such that there exists an invertible mapping T : $\Omega$ \longrightarrow $\Omega$ with the following correspondence: x$\in$$\Omega$ ↔ x = T(x) $\in$$\Omega$, (1.1) and (1.2) t $\in$ U$\sub$p/($\Omega$) ↔ t = to T$\^$-1/ $\in$ U$\sub$p/($\Omega$), where $\Omega$ denotes the corresponding reference elements I = [-1,1] and I ${\times}$ I in R$^1$ and R$^2$ respectively, (1.3) U$\sub$p/($\Omega$) = {t : t is a polynomial of degree $\leq$ p in each variable on $\Omega$}, and (1.4) U$\sub$p/($\Omega$) = {t : t = to T $\in$ U$\sub$p/($\Omega$)}.(omitted)

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.325-330
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• 2015

With approval from the Asia Pacific Metrology Program Working Group on Materials Metrology (APMP WGMM), an international comparison for sheet resistance standards for silicon wafers was firstly conducted among Korea Research Institute of Standards and Science (KRISS) in Korea, CMS/ITRI in Taiwan, and NIM in China, which are national metrology institutes (NMIs), from August 2011 to January 2012. The sheet resistance values of the standards are $10{\Omega}$, $100{\Omega}$, and $1000{\Omega}$; the measurement was conducted in sequence at KRISS, CMS/ITRI, NIM, and KRISS again using the four-point probe method with single and dual configuration techniques. The reference value for the measurement results of the three NMIs was obtained through averaging the values of the three results for each sheet resistance range. The differences between the reference value and the measured values is within 0.22% for $10{\Omega}$, 0.17% for $100{\Omega}$, and 0.12% for $1000{\Omega}$. Therefore, the international consistency for conducting sheet resistance measurements is confirmed within 0.22% through the APMP WGMM approved comparison.

• Journal of the Korean Chemical Society
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• v.30 no.3
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• pp.273-281
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• 1986

This study is focused on the correct measurement of the equations for the determination of the impedance parameters-the differential capacity of the double layer $C_d$, solution resistance $R_Q$, transfer resitance $R_i$, and adsorption pseudcapacity $C_{\phi}$/ The application of only an imaginary part of complex function of ${\omega}$ at the sinusoidal steady state indicates the following equations of total impedance: at low frequency $|Z_{LF}|=1/{\omega}_1\;C_{\phi}\;{\sqrt{1+{{\omega}_1}^2/{\omega}^2}$, at high frequency $|Z_{HF}|={\omega}_2/({\omega}_1{\omega}_3C{\phi})({\omega}^2+{{\omega}_2}^2)\;{\sqrt{{({\omega}^2+{\omega}_2{\omega}_3)}^2+{({\omega}_2{\omega}-{\omega_3{\omega})^2}}$. The values of the total impedance of cell, phase angle, and cell current that are necessary for the calculations of impedance parameters were experimentally measured from 200 to 6000Hz for the following supporting electrolytes, 0.5M $Na_2SO_4$, 1M NaCl, 19.373% sea water, 1M HCl, 1M $KNO_3$ and for $10^{-2}M$ KI and 60mM DBNA (Di-iso-Butylnitrosoamine) in these supporting electrolytes. The derived equations in this study shows that the values of impedance parameters of $C_d,\;C_{\phi},\;R_i\;and\;R_Q\;are\;15{\sim}40\;{\mu}F/cm^2,\;162{\sim}758\;{\mu}F/cm^2\;11.5{\sim}57.6\;ohm{\cdot}cm^2\;and\;0.5{\times}10^{-2}{\sim}4.1{\times}10^{-2}\;ohm{\cdot}cm^2$ respectively.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.388-393
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• 2004

Creep behavior of Ti had been studied in a stress from 9.8 to 29.4 MPa and temperature rang from 873K to 973K with a special reference to tertiary creep. It was found that stress exponent of Ti was larger than that of the general pure metal and the compound metal. The relationship between true strain and strain rate in tertiary creep was appeared as the equation, $ln{\dot{e}}$ = $ln{\dot{e}}_{0}$ + ${\Omega}$ e Also, Apparent activation energy of was appeared as 274.92kJ/mol by using the equation ${\dot{\varepsilon}}_{0}$ = A ${\sigma }_{0}^{\ast_0}$ exp$(-Q_{0}/RT)$