• Proceedings of the Korean Magnestics Society Conference
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• 2006.06a
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• pp.161-161
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• 2006

• Progress in Medical Physics
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• v.16 no.2
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• pp.53-61
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• 2005

The quality factors for cylindrical ionization chambers for kV X-rays were determined by Monte Carlo calculation and measurement. In this study, the X-rays of 60-300 kV beam (lSO-4037) installed in KFDA and specified in energy spectra and beam qualities, and the chambers of PTW N23333 and N30001 were investigated. In calculations, the $R_{\mu}\;and\;R_{Q,Q_{0}}$ in IAEA dosimetry protocols were determined from the air kerma and the cavity dose obtained by theoretical and Monte Carlo calculations. It is shown that the N30001 chamber has a flat response of $\pm1.7\%$ in $110\~300kV$ region, while the response range of two chambers were shown to $\pm3\~4\%$ in $80\~250kV$ region. From this work we have discussed dosimetry protocol for the kV X-rays and we have found that the estimation of energy dependency is more important to apply dosimetry protocol for kV X-rays.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.128-131
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• 2012

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.

• Clinical and Experimental Pediatrics
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• v.59 no.1
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• pp.35-39
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• 2016

Purpose: This study compared the efficacy and tolerability of intravenous (i.v.) phenobarbital (PHB) and i.v. levetiracetam (LEV) in children with status epilepticus (SE) or acute repetitive seizure (ARS). Methods: The medical records of children (age range, 1 month to 15 years) treated with i.v. PHB or LEV for SE or ARS at our single tertiary center were retrospectively reviewed. Seizure termination was defined as seizure cessation within 30 minutes of infusion completion and no recurrence within 24 hours. Information on the demographic variables, electroencephalography and magnetic resonance imaging findings, previous antiepileptic medications, and adverse events after drug infusion was obtained. Results: The records of 88 patients with SE or ARS (median age, 18 months; 50 treated with PHB and 38 with LEV) were reviewed. The median initial dose of i.v. PHB was 20 mg/kg (range, 10-20 mg/kg) and that of i.v. LEV was 30 mg/kg (range, 20-30 mg/kg). Seizure termination occurred in 57.9% of patients treated with i.v. LEV (22 of 38) and 74.0% treated with i.v. PHB (37 of 50) (P=0.111). The factor associated with seizure termination was the type of event (SE vs. ARS) in each group. Adverse effects were reported in 13.2% of patients treated with i.v. LEV (5 of 38; n=4, aggressive behavior and n=1, vomiting), and 28.0% of patients treated with i.v. PHB (14 of 50). Conclusion: Intravenous LEV was efficacious and safe in children with ARS or SE. Further evaluation is needed to determine the most effective and best-tolerated loading dose of i.v. LEV.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.219-219
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• 2013

The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

• Journal of the Korean institute of surface engineering
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• v.41 no.4
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• pp.147-155
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• 2008

The dental orthodontic wire provides a good combination of strength, corrosion resistance and moderate cost. The purpose of this study was to investigate the effects of TiN and ZrN coating on corrosion resistance and physical property of orthodontic wire using various instruments. Wires(round type and rectangular type) were used, respectively, for experiment. Ion plating was carried out for wire using Ti and Zr coating materials with nitrogen gas. Ion plated surface of each specimen was observed with field emission scanning electron microscopy(FE-SEM), energy dispersive X-ray spectroscopy(EDS), atomic force microscopy(AFM), vickers hardness tester, and electrochemical tester. The surface of TiN and ZrN coated wire was more smooth than that of other kinds of non-coated wire. TiN and ZrN coated surface showed higher hardness than that of non-coated surface. The corrosion potential of the TiN coated wire was comparatively high. The current density of TiN coated wire was smaller than that of non-coated wire in 0.9% NaCl solution. Pit nucleated at scratch of wire. The pitting corrosion resistance $|E_{pit}-E_{rep}|$ increased in the order of ZrN coated(300 mV), TiN coated(120 mV) and non-coated wire(0 mV).

• Journal of the Korean Mathematical Society
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• v.45 no.6
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• pp.1705-1723
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• 2008

Let n be a 2-step nilpotent Lie algebra which has an inner product <, > and has an orthogonal decomposition $n\;=z\;{\oplus}v$ for its center z and the orthogonal complement v of z. Then Each element z of z defines a skew symmetric linear map $J_z\;:\;v\;{\longrightarrow}\;v$ given by <$J_zx$, y> = for all x, $y\;{\in}\;v$. In this paper we characterize Jacobi fields and calculate all conjugate points of a simply connected 2-step nilpotent Lie group N with its Lie algebra n satisfying $J^2_z$ = A for all $z\;{\in}\;z$, where S is a positive definite symmetric operator on z and A is a negative definite symmetric operator on v.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.489-493
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• 2016

In this study, the effect of vanadium oxide ($V_2O_5$) content and pre-sintering atmosphere on sealing property of glass frit that consisted of $V_2O_5-BaO-ZnO-P_2O_5-TeO_2-CuO-Fe_2O_3-SeO_2$ was investigated by XPS (X-ray photoelectron spectroscopy). The content of V2O5 was changed to 15, 30, and 45 mol%, and the pre-sintering was carried out in air and $N_2$ condition, respectively. XPS analysis conducted before and after laser irradiation with identical sample. Before laser treatment, glass frits that were pre-sintered at air condition showed both $V^{4+}$ and $V^{5+}$, but the valence state was changed to $V^{5+}$ after laser irradiation when the glass frits contained 30 and 45 mol% $V_2O_5$; this change led to non-adhesive property. On the other hand, glass frits that were pre-sintered at $N_2$ condition exhibited only $V^{4+}$ and it showed fine adhesion irrespective of the $V_2O_5$ content. As a result, the existence of $V^{4+}$ seems to be a major factor for controlling the adhesive property of glass frit for laser sealing.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.54 no.3
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• pp.133-138
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• 2005

This paper presents a characteristics of horizontal swing angle in V type suspension string sets for 765kV T/L. The design of V type suspension string set does not differ from that of general string set for general towers, but it prevents instabilities from swing motion by the horizontal angle and by the wind pressure. We were designed specially 6 conductor yoke, arcing horn and earth horn. And we were decided to 550mm for a distance of strings. We were carried out characteristics of horizontal swing test and movement of mass center test for V-string sets of 400kN single, 300kN double and 400kN double. This products will be used for 765kV T/L of 1 circuit in suspension towers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.1-7
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• 2014

A bidirectional transient voltage suppression (TVS) diode consisting of specially designed $p^--n^{{+}+}-p^-$ multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multi-junctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K-450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped $n^{{+}+}$ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as $0.2{\Omega}$, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ${\pm}4.0$ kV of MM and ${\pm}14$ kV of IEC, and exceeding ${\pm}8$ kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in $p^--n^{{+}+}-p^-$ multi-junctions.