Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.08a
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- Pages.219-219
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- 2013
Analysis of the Abnormal Voltage-Current Behaviors on Localized Carriers of InGaN/GaN Multiple Quantum well from Electron Blocking Layer
- Nam, Giwoong (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University) ;
- Kim, Byunggu (Department of Nano Engineering, Inje University) ;
- Park, Youngbin (Department of Nano Engineering, Inje University) ;
- Kim, Soaram (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University) ;
- Kim, Jin Soo (Division of Advanced Materials Engineering, Chonbuk National University) ;
- Son, Jeong-Sik (Department of Visual Optics, Kyungwoon University) ;
- Leem, Jae-Young (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
- Published : 2013.08.21
Abstract
The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.