• 정보저장시스템학회논문집
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• 제3권3호
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• pp.118-122
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• 2007

Phase-change wet-etching technology using GeSbTe phase-change films is developed. Selective etching between an amorphous and a crystalline phase can be carried out with an alkaline etchant of NaOH. Etching selectivity is dependent not only on the concentration of the alkaline etchant but also on the film structure. Specifically, metal films for heat control cause marked effects on the etching properties of GeSbTe film. Surviving amorphous pits can be obtained with Al metal layer, however etched amorphous pits are seen with Ag metal layer. An opposite selective etching behavior can be observed between samples with two different metal layers.

• 대한치과보철학회지
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• 제30권1호
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• pp.73-83
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• 1992

Now composite resin restoration is clinically accepted in the repair of fractured PFM case, many mechanical surface treatment methods are performed to increase retentive force. The main purpose of this study was to compare the retentive force among the possible surface treatments and to insure the best method for the clinical application to the fractures porecelain and the exposed metal surface. To compare and to analyze the retentive force of repair resin, porcelain specimen were divided into 2 groups, etching group and non-etching group, and etching group were treated with 37% $H_3PO_4$, 1.23% APF, 10% HF and non-etching groups were treated with diamond bur, micro-sandblasasting. Also, metal specimens were divided by 2 groups : one was non-precious metal group which was treated with diamond bur, micro-sandblasting and tin plating and electrolytic etching, the other was precious metal group which was composed of micro-sandblasting treatment only and tin plating treatment with micro-sandblasting. Each specimen had been restored for 48 hours and the bond strength of each specimen was calculated with Universal testing machine. The results were as follows : 1. Porcelain specimen had higher bonding strength than metal specimen for the repair resin(P<0.01). 2. In porcelain specimen, 10% HF etching group had the highest bonding strength among etching and non-etching group. 3. Metal specimen treated with micro-sandblasting had highest bonding strength among the non-sandblasting had hightest bonding strength among the non-precious group, tin plating group had higher bonding strength than micro-sandblasting group between the precious metal groups. 4. Bonding strength of tin plating was increased in precious metal group only.

• 전기화학회지
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• 제16권1호
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• pp.1-8
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• 2013

본 총설에서는 Si 비등방성 식각(anisotropic etching) 공정인 metal-assisted chemical etching(MAC etch 혹은 MACE) 분야 기본 원리, 중요 변수, 그리고 최근 연구 성과들을 정리하였다. 1990년에 최초로 Si 표면에 금속 촉매를 증착한 후 $H_2O_2$/HF 기반 식각을 진행하면 용액 중에서도 비등방성 식각을 통해 다양한 고종횡비(high aspect ratio) 나노구조를 형성할 수 있다는 것이 밝혀 졌다. 고가의 진공기반 장비가 필요한 건식 식각에 비해, 습식 식각을 통해서도 상대적으로 간편하고 경제적으로 종횡비가 큰 Si 마이크로/나노 구조를 만들 수 있게 되었다. 초기 연구들을 통해 MAC etch중 산화제가 촉매에 의해 환원되고, 촉매/Si 계면 근처의 Si 원자들이 선택적으로 식각/용해되어 수직 방향으로 촉매가 Si 기판을 파고 들어가며 비등방성 식각이 발생함이 밝혀졌다. MAC etch에 영향을 미치는 중요 변수로는 금속 촉매의 종류 및 모양, 식각액의 조성, Si기판의 도핑 농도이다. 또한 본 총설은 MAC etch에 의해 형성된 Si 나노 구조를 이용한 태양전지, 수소 연료, 리튬 이온 전지 등의 응용 분야를 다루었다.

• 전기화학회지
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• 제14권4호
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• pp.191-195
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• 2011

Wet chemical etching methods were utilized to conduct Si surface texturing, which could enhance photoelectrochemical hydrogen generation rate. Two different etching methods tested, which were anisotropic metal-catalyzed electroless etching and isotropic etching. The Si nano-texture that was fabricated by the anisotropic etching showed ~25% increase in photocurrent for H2 generation. The photocurrent enhancement was attributed to the reduced reflection loss at the nano-textured Si surface, which provided a layer of intermediate density between water and the Si substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• 한국정보통신학회논문지
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• 제14권6호
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• pp.1465-1468
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• 2010

습식 식각은 식각용액으로서 화학용액을 사용하는 공정으로 반응물이 기판표면에서 화학반응을 일으켜 표면을 식각하는 과정이다. 습식 식각 시 수${\mu}m$의 해상도를 얻기 위해서는 그 부식액의 조성이나, 에칭시간, 부식액의 온도 등을 고려하여야 한다. 본 실험에서 사용한 금속은 Cr, Al, ITO 로 모두 DC sputter 방법을 사용해서 증착하여 사용하였다. Cr박막은 $1300{\AA}$ 정도의 두께를 사용하였고, ITO (Indium Tin Oxide) 박막은 가시광 영역에서 투명하고 (80% 이상의 transmittance), 저저항 (Sheet Resistance : $50\;{\Omega}/sq$ 이하) 인 박막을 사용하였으며, 신호선으로 주로 사용되는 Al등의 증착조건에 따른 wet etching 특성을 조사하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1252-1254
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• 2005

Recently, PDP barrier ribs require the formation of complex structure so that they are usually formed by etching method. For producing the fine ribs structure, during the etching process the metal ions of matrix (glass) of barrier materials should be understood on the etching mechanism with etching condition. We analyzed the quantity of Pb, Si, and B ions from the etch solution as a function of etching time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.859-862
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• 2001

This study describes a selective Ag etching solution for use with pattern on the surface of copper. This etching solution uses potassium iodide and potassium sulfate as the ligand that coordinates to the metal ions and ferricyanide as the oxidant. The etching rate was depended on the concentration of co-ligands and time. But the etching rate wasn't depended on the pH(2∼6), and oxidant(K$_3$Fe(CN)$\_$6/). Complete etching of silver can be achieved rapidly within 90sec for 4.46${\mu}$m thick metal films when aqueous solutions containing K$_3$Fe(CN)$\_$6/, K$_2$S$_2$O$\_$8/ and KI was used. This etching solution was characteristic of anisotropic etching.

• 한국결정성장학회지
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• 제24권5호
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• pp.196-201
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• 2014

화학적 습식 에칭을 통해 AlN와 GaN의 결함 및 표면 특성을 분석했다. 화학적 습식 에칭은 단결정의 결함을 선택적으로 에칭하기 때문에 결정의 품질을 평가하는 좋은 방법으로 주목 받고 있다. AlN와 GaN의 단결정은 NaOH/KOH 용융액을 이용하여 에칭을 했으며, 에칭 후 표면 특성을 알아보기 위해 주사전자현미경(SEM)과 원자힘 현미경(AFM)을 촬영했다. 에치 핏의 깊이를 측정하여 표면에 따른 에칭 속도를 계산했다. 그 결과 AlN와 GaN 표면에는 두 개의 다른 형태에 에치 핏이 형성 되었다. (0001)면의 metal-face(Al, Ga)는 육각 추를 뒤집어 놓은 형태를 갖는 반면 N-face는 육각형 형태의 소구 모양(hillock structure)을 하고 있었다. 에칭 속도는 N-face가 metal-face(Al, Ga)보다 각 각 약 109배(AlN)와 5배 정도 빨랐다. 에칭이 진행되는 동안 에치 핏은 일정한 크기로 증가하다 서로 이웃한 에치 핏들과 합쳐지는 것으로 보여졌다. 또한 AlN와 GaN의 에칭 공정을 화학적 메커니즘을 통해 알아 보았는데, 수산화 이온($OH^-$)과 질소의 dangling bond에 영향을 받아 metal-face(Al, Ga)와 N-face가 선택적으로 에칭되는 것으로 추론되었다.