• Current Optics and Photonics
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• v.1 no.4
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• pp.358-363
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• 2017

In this study, we present a detailed investigation of luminescence properties of a blue light-emitting diode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grown on patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystal quality, the threading dislocation density, surface morphology, residual strain existing in the active region and optical properties. We conclude that the crystalline quality and surface morphology can be greatly improved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtained because the residual strain that existed in the active region can be relaxed when the LED is grown on patterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superior luminescence properties of blue light LED from the viewpoint of residual strain in the active region.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.160-164
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• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.219-219
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• 2009

ceramic metal halide lamps are a subset of high intensity discharge lamps so named because of their high radiance These lamps weak ionized plasma in a fire-resisting but light transmissive wrapping by the corridor of current through atomic and molecular vapors. for commercial applications, For commercial applications, the conversion of electric power to light must occur with good efficiency and with sufficient spectral content throughout the visible (380-800 nm) to permit the light so generated to render colors comparable to natural sunlight. the purpose of this paper is to carry out a study on the variation of ageing time(2000 On/Off[hr]) on the performance of 150W CMH lamps. Experimental results show that the blackening by reacting W(tungsten)with I atomic has been created in the arc tube of an ageing lamp(2000 On/Off[hr]), the arc was unstable, and increased a lamp resistance made lamp voltage increases significantly. Also, Color temperature of the ageing lamp was moved by the losses of Ho with Dy atomics and by recombination of Na with I.

• Journal of Powder Materials
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• v.12 no.4 s.51
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• pp.266-272
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• 2005

Transition metal ions($Ni^{2+}$, $Cr^{3+}$ and $V^{5+}$) doped $TiO_2$ nanostructured powders were synthesized by mechanical alloying(MA) to shift the adsorption threshold into the visible light region. The synthesized powders were characterized by XRD, SEM, TEM and BET for structural analysis, UV-Vis and photoluminescence spectrum for the optical study. Also, photocatalytic abilities were evaluated by decomposition of 4-chlorophenol(4CP) under ultraviolet and visible light irradiations. Optical studies showed that the absorption wavelength of transition metal ions doped $TiO_2$ powders moved to visible light range, which was believed to be induced by the energy level change due to the doping. Among the prepared $TiO_2$ powders, $NiO^{2+}$ doped $TiO_2$ powders, showed excellent photooxidative ability in 4CP decomposition.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.3 s.234
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• pp.470-476
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• 2005

Ultra light metal structures have been studied for several years because of their superior specific stiffness, strength and potential of multi functions. Many studies have been focused on how to manufacture ultra light metal structures and optimize them. In this study, we introduced a new idea to make sandwich panels having octet truss cores. Wires bent in a shape of triangular wave were assembled to construct an Octet truss core and it was bonded with two face sheets to be a sandwich panel. The bending & compressive strength and stiffness were estimated through elementary mechanics for the sandwich specimens with two kinds of face sheets and the results were compared with the ones measured by experiments. Some aspects of assembling and mechanical behavior were discussed compared with Kagome core fabricated from wire, which had been introduced in the authors' previous work.

• Current Applied Physics
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• v.18 no.11
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• pp.1381-1387
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• 2018

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (${\Lambda}=700 nm$) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module. Apart from this, grating devices of smaller periodicity (${\Lambda}=280nm$) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2001.10a
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• pp.281-284
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• 2001

MMC was developed that had distinguished mechanical properties and light weighted. MMC has excellent mechanical properties in many ways in automotive industrial, and get into the spotlight as a light materials substituted for iron and steel. But the know-how about MMC research lack, MMC is expensive and difficult to apply the sound parts. Especially it is difficult to produce the hollow type parts composed with MMC. Therefore, hollow type parts of metal matrix composites by thixoforging process which as co-existing solidus-liquidus phase, it is very important to obtain forming condition. In this study, used materials were A357, A380, A380 $10\%$vol, and $20\%$vol SiCp, and the size of particulates were $14{\mu}m$ and $5.5{\mu}m$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.378-379
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• 2009

High intensity metal halide discharge lamp performance, specifically the generated luminous flux and light color content, depends critically on the arc tube design. Factors influencing the design and consequent lamp efficacy include : lamp size, geometry, arc tube composition, fill chemistry, electrode design and excitation modes. Shaping of Polycrystalline Alumina(PCA) can be realized by conventional ceramic processes. Several processes are applied nowadays. Well-known in the ceramic high pressure field for decades are the pressing and the extrusion method. Newly developed slurry and precious forming technologies give the one-body seamless tubes, which improve thickness uniformity and lighting performance. Now, we reported some optical properties with different arc tube structures of ceramic metal halide lamps.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.802-807
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• 2007

We have developed red phosphorescent top emission organic light-emitting diodes with transparent metal cathodes deposited by using thermal evaporation technique. Phosphorescent guest molecule, BtpIr(acac), was doped in host CBP for the red phosphorescent emission, Ca/Ag, Ba/Ag, and Mg/Ag double layers were used as cathode materials of top emission devices, which were composed of glass/Ni/2TNATA(15 nm)/${\alpha}$-NPD(35 nm)/CBP:BtpIr(acac)(40 nm, 10%)/BCP(5 nm)/$Alq_3$(5 nm)/cathodes. The optical transparencies of these metal cathodes strongly depend on underlying Ca, Ba, and Mg layers. These layers also strongly affect the electrical conduction and emission properties of the red phosphorescent top emission devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.947-950
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• 2001

We report the characteristics of organic light emitting diodes (OLEDS) by controlling the carrier mobility according to the crystalline of Iron(II) Phthalocyanine(Fe-Pc) and metal-free Phthalocyanine (H$_2$-Pc). In order to change the recombination zone, we controlled the hole mobility by changing the crystal structures of Fe-Pc and H$_2$-Pc. OLEDs were constructed with ITO/Fe-Pc/triphenyl-diamine (TPD)/tris-(8-hydroxyquinoline)aluminum (Alq$_3$)/Al and ITO/H$_2$-Pc/triphenyl-diamine (TPD)/tris-(8-hydroxyquinoline)aluminum (Alq$_3$)/Al. The electroluminescent properties were changed according to the heat-treatments of Fe-Pc and H$_2$-Pc. We observed that the recombination zone and the carrier mobility were changed as the higher occupied molecular orbital levels of Fe-Pc and H$_2$-Pc decreased.