• Title/Summary/Keyword: Li metal interface

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Effect of Lithium Ion Concentration on Electrochemical Properties of BF3LiMA-based Self-doping Gel Polymer Electrolytes (BF3LiMA기반 자기-도핑형 겔 고분자 전해질의 전기화학적 특성에 미치는 리튬이온 농도의 영향)

  • Kang, Wan-Chul;Ryu, Sang-Woog
    • Journal of the Korean Electrochemical Society
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    • v.13 no.3
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    • pp.211-216
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    • 2010
  • Boron trifluoride lithium methacrylate ($BF_3$LiMA)-based gel polymer electrolytes (GPEs) were synthesized with various $BF_3$LiMA concentration to elucidate the effect on ionic conductivity and electrochemical stability by a AC impedance and linear sweep voltammetry (LSV). As a result, the highest ionic conductivity reached $5.3{\times}10^{-4}Scm^{-1}$ at $25^{\circ}C$ was obtained for 4 wt% of $BF_3$LiMA. Furthermore, high electrochemical stability up to 4.3 V of the $BF_3$LiMA-based GPE was observed in LSV measurement since the counter anion was immobilized in this self-doped system. On the other hand, it was assumed that there was a rapid decomposition of electrolytes on a lithium metal electrode which results in a high solid electrolyte interface (SEI) resistance. However, a high stability toward graphite or lithium cobalt oxide (LCO) electrode thereby a low SEI resistance was observed from the AC impedance measurement as a function of storage time at $25^{\circ}C$. Consequently, the high ionic conductivity, good electrochemical stability and the good interfacial compatibility with graphite and LCO were achieved in $BF_3$LiMA-based GPE.

Study of the Correlation of Plasma Resonance and the Refractive Index to Dielectric Dispersion in the Complex Plane

  • Zhou, Xiao-Yong;Shen, Yan;Hu, Er-Tao;Chen, Jian-Bo;Zhao, Yuan;Sheng, Ming-Yu;Li, Jing;Zheng, Yu-Xiang;Zhao, Hai-Bin;Chen, Liang-Yao;Li, Wei;Jiang, Xun-Ya;Lee, Young-Pak;Lynch, David W.
    • Journal of the Optical Society of Korea
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    • v.17 no.1
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    • pp.27-32
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    • 2013
  • Based on the dispersive feature of the dielectric function of noble metals and the wave vector conservation in physics, both the plasma effect and the complex refractive index, which are profoundly correlated to the complex dielectric function and permeability, have been studied and analyzed. The condition to induce a bulk or a surface plasma in the visible region will not be satisfied, and there will be one solution for the real and the imaginary parts of the refractive index, restricting it only to region I of the complex plane. The results given in this work will aid in understanding the properties of light transmission at the metal/dielectric interface as characterized by the law of refraction in nature.

Synthesis of LiDAR-Detective Black Material via Recycling of Silicon Sludge Generated from Semiconductor Manufacturing Process and Its LiDAR Application (반도체 제조공정에서 발생하는 실리콘 슬러지를 재활용한 라이다 인지형 검은색 소재의 제조 및 응용)

  • Minki Sa;Jiwon Kim;Shin Hyuk Kim;Chang-Min Yoon
    • Journal of the Korea Organic Resources Recycling Association
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    • v.32 no.1
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    • pp.39-47
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    • 2024
  • In this study, LiDAR-detective black material is synthesized by recycling silicon sludge (SS) that is generated from semiconductor manufacturing process, and its recognition is confirmed using two types of LiDAR sensors (MEMS and Rotating LiDAR). In detail, metal impurities on the surface of SS is removed, followed by coating of titanium dioxide (TiO2) and subsequent chemical reduction to obtain SS-derived black TiO2 (SS/bTiO2) material. As-prepared SS/bTiO2 is mixed with transparent paint to prepare hydrophilic black paints and applied to a glass substrate using a spray gun. SS/bTiO2-based paint shows similar blackness (L*=15.7) compared to commercial carbon black-based paint, and remarkable NIR reflectance (26.5R%, 905nm). Furthermore, MEMS and Rotating LiDAR have successfully detected the SS/bTiO2-based paint. This is attributed to the occurrence of high reflection of light at the interface between the black TiO2 and the silicon sludge according to the Fresnel's reflection principle. Hence, the new application field to effectively recycle silicon sludge generated in the semiconductor manufacturing process has been presented.

Interface Characteristics and Electrical Properties of SiO2 and V2O5 Thin Films Deposited by the Sputtering (스퍼터링 방법으로 증착한 SiO2와 V2O5박막의 전류특성과 계면분석)

  • Li, Xiangjiang;Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.4
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    • pp.66-69
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    • 2018
  • This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.

The Electrical Resistivity of a SiCw/Al Alloy Composite with Temperature

  • Kim Byung-Geol;Dong Shang-Li;Park Su-Dong;Lee Hee-Woong
    • Korean Journal of Materials Research
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    • v.14 no.7
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    • pp.489-493
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    • 2004
  • The electrical property of MMC is essentially important to some applications such as power transmission lines and cables, electronic and electrical components as well as electromagnetic shielding equipments. The behavior of electrical resistivity of $SiC_{w}/Al$ alloy composites under as-extruded and annealed conditions has been investigated within the temperature range from room temperature to $450^{\circ}C$. It can be seen that within entire temperature range, the electrical resistivity of composites was higher than that of an unreinforced matrix alloy under the same condition of either as-extrusion or annealing. The temperature dependence of both exhibited positive incline like a typical metal. The variation of electrical resistivity of an unreinforced matrix alloy with temperature from ambient temperature to $450^{\circ}C$ was nearly monotonous, while those of composites increased monotonously at low temperature and rose to a high level after about $250^{\circ}C or 275^{\circ}C$. The difference of these temperature dependences on electrical resistivity can be interpreted as qualitatively the interfaces of $SiC_{w}$ fibers and matrix, where act as nucleation sites.

Construction of Strontium Titanate/Binary Metal Sulfide Heterojunction Photocatalysts for Enhanced Visible-Light-Driven Photocatalytic Activity

  • Yu, Yongwei;Yang, Qing;Ma, Jiangquan;Sun, Wenliang;Yin, Chong;Li, Xiazhang;Guo, Jun;Jiang, Qingyan;Lu, Zhiyuan
    • Nano
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    • v.13 no.11
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    • pp.1850130.1-1850130.12
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    • 2018
  • A novel strontium titanate/binary metal sulfide ($SrTiO_3/SnCoS_4$) heterostructure was synthesized by a simple two-step hydrothermal method. The visible-light-driven photocatalytic performance of $SrTiO_3/SnCoS_4$ composites was evaluated in the degradation of methyl orange (MO) under visible light irradiation. The photocatalytic performance of $SrTiO_3/SnCoS_4-5%$ is much higher than that of pure $SrTiO_3$, $SnCoS_4$, $SrTiO_3/SnS_2$ and $SrTiO_3/CoS_2$. The $SrTiO_3/SnCoS_4$ composite material with 5 wt.% of $SnCoS_4$ showed the highest photocatalytic efficiency for MO degradation, and the degradation rate could reach 95% after 140 min irradiation time. The enhanced photocatalytic activity was ascribed to not only the improvement of visible light absorption efficiency, but also the construction of a heterostructure which make it possible to effectively separate photoexcited electrons and holes in the two-phase interface.

Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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Computational Analysis for a Molten-salt Electrowinner with Liquid Cadmium Cathode (액체 카드뮴 음극을 사용한 용융염 전해제련로 전산해석)

  • Kim, Kwang-Rag;Jung, Young-Joo;Paek, Seung-Woo;Kim, Ji-Yong;Kwon, Sang-Woon;Yoon, Dal-Seong;Kim, Si-Hyung;Shim, Jun-Bo;Kim, Jung-Gug;Ahn, Do-Hee;Lee, Han-Soo
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.8 no.1
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    • pp.1-7
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    • 2010
  • In the present work, an electrowinning process in the LiCl-KCl/Cd system is considered to model and analyze the electrotransport of the actinide and rare-earth elements. A simple dynamic modeling of this process was performed by taking into account the material balances and diffusion-controlled electrochemical reactions in a diffusion boundary layer at an electrode interface between the molten salt electrolyte and liquid cadmium cathode. The proposed modeling approach was based on the half-cell reduction reactions of metal chloride occurring on the cathode. This model demonstrated a capability for the prediction of the concentration behaviors, a faradic current of each element and an electrochemical potential as function of the time up to the corresponding electrotransport satisfying a given applied current based on a galvanostatic electrolysis. The results of selected case studies including five elements (U, Pu, Am, La, Nd) system are shown, and a preliminary simulation is carried out to show how the model can be used to understand the electrochemical characteristics and provide better information for developing an advanced electrowinner.

Contact Resistance Reduction between Ni-InGaAs and n-InGaAs via Rapid Thermal Annealing in Hydrogen Atmosphere

  • Lee, Jeongchan;Li, Meng;Kim, Jeyoung;Shin, Geonho;Lee, Ga-won;Oh, Jungwoo;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.283-287
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    • 2017
  • Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance ($R_c$) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% $H_2$ and 4% $H_2$ annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of $R_c$ at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest $R_c$ in 4% $H_2$ sample, that is, higher current for 4% $H_2$ sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.

Blistering Induced Degradation of Thermal Stability Al2O3 Passivation Layer in Crystal Si Solar Cells

  • Li, Meng;Shin, Hong-Sik;Jeong, Kwang-Seok;Oh, Sung-Kwen;Lee, Horyeong;Han, Kyumin;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.1
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    • pp.53-60
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    • 2014
  • Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.