• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.23-27
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• 2005

This paper presents a simulation methodology for the poly-silicon oriented TCAD(technology-CAD) system. A computer simulation environment for the poly-silicon processing has been set up with the proper adoption of the two-stream model for ion-doping, diffusion, and defects inside of grain and on the grain boundary. After the simulator calibration, simulation results for the poly-silicon diffusion hat shown a good agreement with the SIMS data.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.188-192
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• 2007

High brightness and long persistent luminescence phosphor $CaAl_2O_4:Eu^{2+}$ was prepared with varying $Eu^{2+}$ concentration by solid state reaction technique. Synthesized materials were investigated by powder X-ray diffractometer (XRD), SEM, TEM, photoluminescence excitation and emission spectra. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}$ was observed in the blue region (${\lambda}_{max}\;=\;440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration. These materials have great potential for outdoor night time displays.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1859-1864
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• 1990

The effect of H+ and OH- ion concentrations at doped Si semiconductor/pH buffer solution interfaces were investigated in terms of cyclic current-voltage characteristics. The effects of space charge on oppositely doped Si semiconductors, i.e., p-and n-Si semiconductors, can be effectively applied to study the pH effects and the slow surface states at the interfaces. The adsorptions of H+ and OH- inons on the doped Si semiconductor surfaces are physical adsorption rather than chemical adsorption. Adsorptive processes and charging effects of the slow surface states can be explained as the potential barrier variations and the related current-voltage characteristics at the interfaces. Under forward bias, the charged slow surface states on the p-and n-si semiconductor surface are donor and acceptor slow surface states, respectively. The effects of minority carriers on the slow surface states can be neglected at the doped Si semiconductor interfaces.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.48-53
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• 1998

Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.156-161
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• 2017

This work presents a novel structure for junction-less tunneling field effect transistor (JL-TFET) with a floating gate over the source region. Introduction of floating gate instead of fixed metal gate removes the limitation of fabrication process suitability. The proposed device is based on a heavily n-type-doped Si-channel junction-less field effect transistor (JLFET). A floating gate over source region and a control-gate with optimized metal work-function over channel region is used to make device work like a tunnel field effect transistor (TFET). The proposed device has exhibited excellent ID-VGS characteristics, ION/IOFF ratio, a point subthreshold slope (SS), and average SS for optimized device parameters. Electron charge stored in floating gate, isolation oxide layer and body doping concentration are optimized. The proposed JL-TFET can be a promising candidate for switching performances.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.264-267
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• 2008

Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• Journal of Electrochemical Science and Technology
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• v.3 no.4
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• pp.172-177
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• 2012

Mo-doped $LiFePO_4$ was synthesized via co-precipitation method using sucrose as the carbon source. Structure, surface morphology, and the electrochemical properties of the synthesized olivine compounds were investigated using Rietveld refinement of X-ray diffraction data (XRD), scanning electron microscopy (SEM), and electrochemical charge-ischarge tests. Spherical morphology with the particle size of ${\sim}8{\mu}m$ authenticated the enhanced tap density and volumetric energy density of the synthesized materials. Charge-discharge behavior of $LiFePO_4$ and Mo-doped $LiFePO_4$ cells demonstrated a specific capacity of 130 and 145 mAh $g^{-1}$, respectively. Mo-doped $LiFePO_4$ cells exhibited an excellent discharge capacity at 96 mAh $g^{-1}$ at 7 C-rate.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.140-140
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• 1995

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.294-297
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• 2012

In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (AFM-LO) has been performed on the implanted samples, with and without activation anneal, using an applied bias (~25 V). It has been clearly shown that the post-implantation annealing process at $1,650^{\circ}C$ has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.3
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• pp.210-217
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• 2004

This paper presents a simulation methodology for the poly-silicon oriented TCAD(technology-CAD) system. A computer simulation environment for the poly-silicon processing has been set up with the proper adoption of the two-stream model for ion-doping, diffusion, and defects inside of grain and on the grain boundary. After the simulator calibration, simulation results for the poly-silicon diffusion has showed a good agreement with the SIMS data.