JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Investigation of Junction-less Tunneling Field Effect Transistor (JL-TFET) with Floating Gate

  • Ali, Asif (Department of Electronic Engineering, Myongji University) ;
  • Seo, Dongsun (Department of Electronic Engineering, Myongji University) ;
  • Cho, Il Hwan (Department of Electronic Engineering, Myongji University)
  • Received : 2016.10.07
  • Accepted : 2016.11.23
  • Published : 2017.02.28
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Abstract

This work presents a novel structure for junction-less tunneling field effect transistor (JL-TFET) with a floating gate over the source region. Introduction of floating gate instead of fixed metal gate removes the limitation of fabrication process suitability. The proposed device is based on a heavily n-type-doped Si-channel junction-less field effect transistor (JLFET). A floating gate over source region and a control-gate with optimized metal work-function over channel region is used to make device work like a tunnel field effect transistor (TFET). The proposed device has exhibited excellent ID-VGS characteristics, ION/IOFF ratio, a point subthreshold slope (SS), and average SS for optimized device parameters. Electron charge stored in floating gate, isolation oxide layer and body doping concentration are optimized. The proposed JL-TFET can be a promising candidate for switching performances.

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References

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