A Study on the Low Temperature(45$0^{\circ}C$) Poly-Si TFT Fabricated on the Glass Substrate by Metal-Induced Lateral Crystallization (MILC)

금속 유도 측면 결정화에 의해 유리기판 위에 제작된 저온(45$0^{\circ}C$) 다결정 박막 트랜지스터에 관한 연구

Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.