Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Local Oxidation Characteristics on Implanted 4H-SiC by Atomic Force Microscopy

원자힘 현미경을 이용한 이온 주입된 4H-SiC 상의 국소 산화 특성

  • Lee, Jung-Ho (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Ahn, Jung-Joon (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 이정호 (광운대학교 전자재료공학과) ;
  • 안정준 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Received : 2012.03.20
  • Accepted : 2012.03.24
  • Published : 2012.04.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (AFM-LO) has been performed on the implanted samples, with and without activation anneal, using an applied bias (~25 V). It has been clearly shown that the post-implantation annealing process at $1,650^{\circ}C$ has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

Keywords

References

  1. S. M. Koo, The proceedings of KIEE, 59, 14 (2010).
  2. P. Avouris, T. Hertel, and R. Martel, Appl. Phys. Lett., 71, 285 (1997). https://doi.org/10.1063/1.119521
  3. K. Kawahara, J. Suda, G. Pensl, and T. Kimoto, J. Appl. Phys., 108, 033706 (2010). https://doi.org/10.1063/1.3456159
  4. Y. D. Jo, S. H. Seo, W. Bahng, S. C. Kim, N. K. Kim, S. S. Kim, and S. M. Koo, Appl. Phys. Lett., 96, 082105 (2010). https://doi.org/10.1063/1.3327832
  5. F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, I. Bhat, D. J. Larkin, Mat. Sci. Forum, 585, 527 (2006).