• 전기전자학회논문지
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• 제23권3호
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• pp.1033-1037
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• 2019

GaN-based sensors have been widely investigated thanks to its potential in detecting the presence of hydrogen. In this study, we fabricated hydrogen gas sensors with AlGaN/GaN heterojunction and investigated how the sensing performance to be affected by SiN surface passivation. The gas sensor employed a high electron mobility transistors (HEMTs) with 30 nm platinum catalyst as a gate to detect the hydrogen presence. SiN layer was deposited by inductively-coupled chemical vapor deposition as post-passivation. The sensors with SiN passivation exhibited hydrogen sensing characteristics with various gas flow rates and concentrations of hydrogen in inert background gas at $200^{\circ}C$ similar to the ones without passivation. Aside from quick response time for both sensors, there are differences in sensitivity and recovery time because of the existence of the passivation layer. The results also confirmed the dependence of sensing performance on gas flow rate and gas concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.29-32
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• 2001

Hydrogen passivation of Si nanocrystals identifies luminescence mechanism indirectly. Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser After deposition, Si nanocrystallites thin films have been annealed at 600$^{\circ}C$ and 760$^{\circ}C$ in nitrogen ambient, respectively. Hydrogen passivation was subsequently performed at 500$^{\circ}C$ in forming gas (95 % N$_2$ + 5 % H$_2$) for an 1 hour. We report the photoluminescnece(PL) property of Si thin films by the hydrogen passivation. The luminescence mechanism of Si nanocrystallites has also been investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1608-1611
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• 2009

Here the hydrogen passivation treatment has been adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA poly-Si). We have investigated the effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si and analyzed the mechanism of the hydrogen passivation preliminary. It has been found that the quality of the poly-Si annealed by YAG laser could be improved after proper hydrogen plasma treatment.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2009년도 춘계학술대회 논문집
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• pp.33-36
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• 2009

본 연구에서는 액체로켓엔진 산화제로 과산화수소를 사용하기 위한 공급 설비 구축 및 세척 방법을 제시하고자 한다. 과산화수소 공급 설비의 오염을 최소화하기 위하여 공급 설비를 세척하고 세척된 공급 설비에 보호막을 입히는 passivation 절차를 확립하였다. 또한, 구축된 공급 설비는 누설 시험과 연소 시험을 통해서 안정성을 검증하였다.

• 한국수소및신에너지학회논문집
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• 제25권3호
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• pp.305-310
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• 2014

This study examined the morphological changes in lithium surface immersed in 1mol $dm^{-3}$ (M) $LiPF_6 $ dissolved in propylene carbonate (PC) containing different 1,2-dimethoxyethane (DME) concentrations as a co-solvent. A passivation film was formed on the surface of lithium metal by electrolyte decomposition. The passivation film formation reactions were significantly affected by the amount of co-solvent, DME, in electrolyte solution. A stable film was obtained from the 1 M $LiPF_6 $ / PC:DME (67:33) solution in which lithium electrode showed good electrochemical performances. Atomic force microscope (AFM) and electrochemical impedance spectroscopy (EIS) results revealed that there were no direct correlations between changes in the surface morphology of lithium metal and the resistance behavior of its passivation film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.468-472
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• 1997

The effect of the surface state on the quantum efficiency of underlying GaAs/AlGaAs multi-quantum well(MQW) structures consisting of three GaAs quantum wells with different thickness, is studied by low temperature photoluminescence(PL). The structure was grown by molecular beam epitaxy(MBE) on (100) GaAs substrate. The thickness of three GaAs quantum wells was 3, 6 and 9 nm, respectively. The MQWs were placed apart from 50 nm AlGaAs edge-barriers including two inner-barriers with 15 nm in thickness. The samples used in this study were prepared with different growth temperatures. Particularly, the hydrogen passivation effect to the 9 nm quantum well located at near surface appeared much stronger than any others. Transition energy and optical gain related to the hydrogen passivation effects on the multi-quantum well structure was calculated by transfer matrix method.

• 대한전자공학회논문지
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• 제27권12호
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• pp.1865-1869
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• 1990

N-Channel polysilicon MOSFETs (W/L=20/1.5, 3, 5.10\ulcorner) were fabricated using RTP (Rapid Thermal Processor) and hydrogen passivation. The N+ source, drain and gate were annealed and recrystallized using RTP at temperature of 1000\ulcorner-1100\ulcorner. But the active areas were not specially crystallized before growing the gate oxide. Without the hydrogen passivarion, excellent transistor characteristics (ON/OFF=5.10**6, S=85MV/DEC, IL=51pA/\ulcorner) were obtained for 1.5\ulcorner MOSFET. Also the transistor characteristics were improved by hydrogen passivation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1239-1241
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• 1995

The different hydrogen passivation effects on low-temperature processed and high-temperature processed poly-Si thin film transistors have been investigated. The hydrogen passivation on low-temperature processed poly-Si TFT results in the increase of the field-effect mobility and the decrease or the threshold voltage, while the hydrogenation increases the field-effect mobility and decreases the leakage current in high-temperature processed poly-Si TFT. The effective trap state densities of low-temperature processed poly-Si TFT before and after 5 hours of hydrogenation are estimated at about $4.0{\times}10^{12}/cm^2$ and $1.5{\times}10^{12}/cm^2$, while those of high-temperature processed poly-Si TFT are about $1.5{\times}10^{12}/cm^2$ and $1.2{\times}10^{12}/cm^2$, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권6호
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• pp.236-239
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• 2002

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.55-59
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• 1990

N-Channel polysilicon MOSFETs (W/L=20/1.5, 3, 5.10$\mu\textrm{m}$) were fabricated using RTP(Rapid Thermal Processor) and hydrogen passivation. The N+ Source, drain and gate were annealed and recrystallized using RTP at temperature of 1000$^{\circ}C$-1100$^{\circ}C$. But the active areas were now specially crystallized before growing the gate oxide. Without the hydrogen passivation, excellent transistor characteristics (ON/OFF=5${\times}$10$\^$6/, s=85mv/dec, I$\_$L/=51pA/$\mu\textrm{m}$) were obtained for 1.5$\mu\textrm{m}$ MOSFET. Also the transistor characteristics were improved by hydrogen passivation.