Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
권호 표지
DOI QR코드

DOI QR Code

Pt-AlGaN/GaN HEMT-based hydrogen gas sensors with and without SiNx post-passivation

  • Vuong, Tuan Anh (Dept. of Electronic and Electrical Engineering, Hongik University) ;
  • Kim, Hyungtak (Dept. of Electronic and Electrical Engineering, Hongik University)
  • Received : 2019.09.05
  • Accepted : 2019.09.26
  • Published : 2019.09.30
Download PDF
⟨ Previous Next ⟩

Abstract

GaN-based sensors have been widely investigated thanks to its potential in detecting the presence of hydrogen. In this study, we fabricated hydrogen gas sensors with AlGaN/GaN heterojunction and investigated how the sensing performance to be affected by SiN surface passivation. The gas sensor employed a high electron mobility transistors (HEMTs) with 30 nm platinum catalyst as a gate to detect the hydrogen presence. SiN layer was deposited by inductively-coupled chemical vapor deposition as post-passivation. The sensors with SiN passivation exhibited hydrogen sensing characteristics with various gas flow rates and concentrations of hydrogen in inert background gas at $200^{\circ}C$ similar to the ones without passivation. Aside from quick response time for both sensors, there are differences in sensitivity and recovery time because of the existence of the passivation layer. The results also confirmed the dependence of sensing performance on gas flow rate and gas concentration.

Keywords

References

  1. J. Kim, et al., "Hydrogen-sensitive GaN Schottky diodes," Solid-State Electron., vol.47, no.6, pp.1069-1073, 2003. DOI: 10.1016/S0038-1101(02)00485-9
  2. S. Jang, et al., "Enhanced Hydrogen Detection Sensitivity of Semipolar (112-2) GaN Schottky Diodes by Surface Wet Etching on Schottky Contact," J. Electrochem. Soc., vol.163, no.8, pp. B456-B459, 2016. DOI: 10.1149/2.1161608jes
  3. J. Schalwig, et al., "Hydrogen response mechanism of Pt-GaN Schottky diodes," Appl. Phys. Lett., vol.80, no.7, pp.1222-1224, 2002. DOI: 10.1063/1.1450044
  4. B. S. Kang, et al., "AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing," IEEE Sens. J., vol.5, no.4, pp.677-680, 2005. DOI: 10.1109/JSEN.2005.848136
  5. I. Daumiller, et al., "Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs," IEEE Electron Device Lett., vol.20, no.9, pp.448-450, 1999. DOI: 10.1109/55.784448
  6. J. Song, et al., "Pt-AlGaN/GaN Schottky diodes operated at $800^{\circ}C$ for hydrogen sensing," Appl. Phys. Lett., vol.87, no.13, pp.133501-133503, 2005. DOI: 10.1063/1.2058227
  7. H. I. Chen, et al., "Comprehensive study of adsorption kinetics for hydrogen sensing with an electroless-plated Pd-InP Schottky diode," Sens. Actuators B: Chem, vol.92, no.1-2, pp.6-16, 2003. DOI: 10.1016/S0925-4005(03)00125-4
  8. J. Schalwig, et al., "Hydrogen response mechanism of Pt-GaN Schottky diodes," App. Phys. Lett., vol.80, no.7, pp.1222-1224, 2002. DOI: 10.1063/1.1450044
  9. K. Matsuo et al., "Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure," App. Sur. Sci., vol.224, no.1-4, pp.273-276, 2005. DOI: 10.1016/j.apsusc.2004.10.149
  10. L. G. Ekedah, et al., "Hydrogen Sensing Mechanisms of Metal-Insulator Interfaces," Acc. Chem. Res., vol.31, no.5, pp.249-256, 1998. DOI: 10.1021/ar970068s
  11. C. Consejo, et al., "Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies," IEEE Sens. J., vol. 5, no.1, pp.123-127, 2015. DOI: 10.1109/JSEN.2014.2340436