Subthreshold characteristics of polysilicon MOSFETs depending on Annealing Temperature

어닐링 온도 변화에 따른 다결정 MOSFET의 Subthreshold 특성

N-Channel polysilicon MOSFETs (W/L=20/1.5, 3, 5.10$\mu\textrm{m}$) were fabricated using RTP(Rapid Thermal Processor) and hydrogen passivation. The N+ Source, drain and gate were annealed and recrystallized using RTP at temperature of 1000$^{\circ}C$-1100$^{\circ}C$. But the active areas were now specially crystallized before growing the gate oxide. Without the hydrogen passivation, excellent transistor characteristics (ON/OFF=5${\times}$10$\^$6/, s=85mv/dec, I$\_$L/=51pA/$\mu\textrm{m}$) were obtained for 1.5$\mu\textrm{m}$ MOSFET. Also the transistor characteristics were improved by hydrogen passivation.