Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Hydrogen Passivation on the Photoluminescence of Si Nanocrystallites Thin Flms

수소 Passivation에 따른 실리콘 나노결정 박막의 광학적 특성 변화 연구

  • 전경아 (연세대학교 전기전자공학과) ;
  • 김종훈 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2001.07.01
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Abstract

Hydrogen passivation of Si nanocrystals identifies luminescence mechanism indirectly. Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser After deposition, Si nanocrystallites thin films have been annealed at 600$^{\circ}C$ and 760$^{\circ}C$ in nitrogen ambient, respectively. Hydrogen passivation was subsequently performed at 500$^{\circ}C$ in forming gas (95 % N$_2$ + 5 % H$_2$) for an 1 hour. We report the photoluminescnece(PL) property of Si thin films by the hydrogen passivation. The luminescence mechanism of Si nanocrystallites has also been investigated.

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