한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Hydrogen Passivation for the Enhancement of Poly-Si Performance Crystallized By Double-Frequency YAG Laser

  • Li, Juan (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Chong, Luo (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Ying, Yao (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • He, Li (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Meng, Zhiguo (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Chunya, Wu (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Xiong, Shaozhen (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Kwok, Hoi-Sing (Department of electronic and computer engineering The Hong Kong University of Science and Technology)
  • Published : 2009.10.12
Download PDF
⟨ Previous Next ⟩

Abstract

Here the hydrogen passivation treatment has been adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA poly-Si). We have investigated the effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si and analyzed the mechanism of the hydrogen passivation preliminary. It has been found that the quality of the poly-Si annealed by YAG laser could be improved after proper hydrogen plasma treatment.

Keywords