• Title/Summary/Keyword: High-spin

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Convenient Assay of O2- Generated on Potato Tuber Tissue Slices Treated with Fungal Elicitor by Electron Spin Resonance - No Secondary Oxidative Burst Induction by H2O2 Treatment

  • Park, Hae-Jun;Doke, Noriyuki
    • The Plant Pathology Journal
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    • v.21 no.3
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    • pp.283-287
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    • 2005
  • Since the discovery of generation of $O_2^-$ in plant, many evidence for the oxidative burst (OXB) has been accumulated in various combinations of plant and pathogen or elicitor systems. $O_2^-$ generating system responsible for the OXB was coupled with oxidation of reduced nicotinamide adenine dinucleotide phosphate (NADPH) in microsomal fraction isolated from sliced aged potato tuber slices which were treated by hyphal wall components elicitor from Phytophthora infestans (HWC). We developed new assay method for quantitative measurement of oxygen radical $O_2^-$ by using electron spin resonance (ESR) analysis during elicitor­induced OXB on the surface of plant tissues. The ESR analysis using an $O_2^-$ trapper, Tiron (1,2-dihydroxy-3,5­benzenedisulfonic acid), provided a convenient assay for detecting only $O_2^-$ during elicitor-induced OXB producing various active oxygen species (AOS) on plant tissue surface. Tiron was oxidized to Tiron semiquinon radical by $O_2^-$. Quantity of the radical signal was measured by specific spectra on ESR spectroscopy. The level of $O_2^-$ was high in from surface of potato tuber tissue treated with hyphal cell wall elicitor (HWC) from Phytophthora infestans. There was no secondary OXB induction by $H_2O_2$ treatment in plant.

4f spin dynamics in TbNi$_2$B$_2$C by $^{11}$B NMR

  • Lee, K.H.;Seo, S.W.;Kim, D.H.;Khang, K.H.;Seo, H.S.;Hwang, C.S.;Hong, K.S.;Cho, B.K.;Lee, W.C.;Lee, Moo-Hee
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.61-64
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    • 2000
  • $^{11}$B NMR measurements have been performed to investigate local electronic structure and 4f spin dynamics for TbNi$_2$B$_2$C single crystal. $^{11}$B NMR spectra show three resonance peaks due to the quadrupolar interaction. Shift and linewidth are huge and strongly temperature-dependent. In addition, both are proportional to magnetic susceptibility, indicating that the hyperfine field at the boron site originates from the 4f spins of Tb. $^{11}$B NMR shift and relaxation rates show high anisotropy for field parallel and perpendicular to the c-axis. Anisotropy of the shift and the relaxation rates suggests that the hyperfine field perpendicular to the c-axis is larger.

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Optimizing of Diffusion Condition in Spin on Doping for c-Si Solar Cell (스핀 도핑을 이용한 단결정 실리콘 태양전지 확산 공정 최적화)

  • Yeo, In Hwan;Park, Ju Eok;Kim, Jun Hee;Cho, Hae Sung;Lim, Donggun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.5
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    • pp.410-414
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    • 2013
  • Rapid thermal processing (RTP) abruptly decreases the time required to perform solar cell processes. RTP were used to form emitter of crystalline silicon solar cells. The emitter sheet resistance is studied as a function of time and temperature. The objective of this study is reduction of doping process time with same performance. Emitter difRapid thermal dfusion was carried out by using a spin on doping and a RTP. iffusion was performed in the temperature range of $700{\sim}750^{\circ}C$ for 1m 30s~15 m. Thermal budgets yielded a $50{\Omega}/sq$ emitter using a P509 source. To reduce process time and get high efficiency, rapid thermal diffusion by IR lamp was employed in air atmosphere at $700^{\circ}C$ for 15 m.

The Preparation and Electrical Characteristics of BST Thin Film by Spin-Coating Method (회전코팅법을 이용한 BST 박막의 제조 및 전기적 특성에 관한 연구)

  • Ki, Hyun-Chul;Kim, Duck-Keun;Lee, Seung-Woo;Hong, Kyung-Jin;Lee, Jin;Kim, Tae-Sung
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.918-920
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    • 1999
  • Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].

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Nanoscale Microstructure and Magnetic Transport in AIN/Co/AIN/Co… Discontinuous Multilayers

  • Yang, C.J.;Zhang, M.;Zhang, Z.D.;Han, J.S.
    • Journal of Magnetics
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    • v.8 no.2
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    • pp.98-102
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    • 2003
  • Microstructure and magnetic transport phenomina in rf sputtered AIN/CO type ten- layered discontinuous films of nanoscaled [AIN(3 nm)/Co(t nm)]…$_10$ with t$_Co$=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer, Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AIN matrix, and the films showed the superparamagnetic behavior with a high MR value of ${\Delta}p/p_0$=1.8%. As t$_Co$ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. funneling barrier called “decay length far tunneling” fur the films haying the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$^{-1}$.

Bi-directional Two Terminal Switching Device based on SiGe for Spin Transfer Torque (STT) MRAM

  • Yang, Hyung-Jun;Kil, Gyu-Hyun;Lee, Sung-Hyun;Song, Yun-Heub
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.385-385
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    • 2012
  • A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

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Preparation and Characterization of $Bi_{4-x}Sm_xTi_3O_{12}(0<\leqx\geq2)$ Thin Films Using Sol-Gel Processing (졸겔공정을 이용한 $Bi_{4-x}Sm_xTi_3O_{12}(0<\leqx\geq2)$ 박막제조 및 특성평가)

  • 이창민;고태경
    • Journal of the Korean Ceramic Society
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    • v.34 no.8
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    • pp.897-907
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    • 1997
  • Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.

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Transparent Thin Film Dye Sensitized Solar Cells Prepared by Sol-Gel Method

  • Senthil, T.S.;Kang, Misook
    • Bulletin of the Korean Chemical Society
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    • v.34 no.4
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    • pp.1188-1194
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    • 2013
  • Transparent $TiO_2$ thin films have been prepared by sol-gel spin coating method. The sols used for deposition of thin films were prepared with different ethanol content. The effect of ethanol (solvent) concentration and annealing temperature on the performance of $TiO_2$ thin film solar cells has been studied. The results indicate that the as deposited films are amorphous in nature. $TiO_2$ thin films annealed at temperatures above $350^{\circ}C$ exhibited crystalline nature with anatase phase. The results also indicated that the crystallinity of the films improved with increase of annealing temperature. The high resolution transmission electron microscope images showed lattice fringes corresponding to the anatase phase of $TiO_2$. The band gap of the deposited films has been found to decrease with increase in annealing temperature and increase with increase in ethanol concentration. The dependents of photovoltaic efficiency of the dye-sensitized $TiO_2$ thin film solar cells (DSSCs) with the amount of ethanol used to prepare thin films was determined from photocurrent-voltage curves.

Implementation of Single-Wheeled Robots : GYROBO (한 바퀴로 구동하는 로봇 GYROBO의 구현)

  • Kim, Pil-Kyo;Kim, Yeon-Seop;Jung, Seul
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.44 no.4 s.316
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    • pp.35-41
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    • 2007
  • In this paper a single-wheeled robot called GYROBO is built and its hardware is implemented. The single-wheeled robot is similar to a rolling disk relying on gyroscopic motions to maintain its balance. The GYROBO consists of three actuators: a spin motor a tilt motor, and a drive motor. The spin motor spins a flywheel at a high rate so that it provides the balancing stability to upright the robot. The tilt motor controls steering of the robot by gyroscopic effect. The drive motor makes forward accelerated motion to the robot. Several models are designed. Experimental works of the GYROBO to turn and move forward have been presented.

14N Mines Pulsed-ENDOR of Proximal Histidine and Heme of Aquometmyoglobin and Fluormetmyoglobin

  • Lee, Hong-In
    • Bulletin of the Korean Chemical Society
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    • v.23 no.12
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    • pp.1769-1772
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    • 2002
  • Previous $^{19}F\;and\;^{1,2}H$ electron-nuclear double resonance (ENDOR) study of fluorometmyoglobin (MbF) in frozen-solution state provided sensitive tools sensing subtle structural changes of the heme that are not obtainable from X-ray. [Fann et al., J. Am. Chem. Soc. 1995, 117, 6019] Because of the intrinsic inhomogeneouse EPR line broadening effect of MbF in frozen-solution state, detection of the intrinsic inhomogeneouse EPR line broadening effect of MbF in frozen-solution state, detection of the electronic and geometrical changes of the heme ring itself and the proximal histidine by using $^{14}N$ CW ENDOR was interfered. In the present study, hyperfine-sensitive $^{14}N$ Mims ENDOR technique of pulsed-EPR was employed to probe the changes. With two different $\tau$ values of 128 and 196 ns, $^{14}N$ ENDOR signals of the heme and proximal histidine were completely resolved at $g'_{II}(=g_e=2)$. This study present that X-band $^{14}N$ Mims ENDOR sequence can sensitively detect the small changes of the spin densities and p orbital populations of the proximal and the heme nitrogens, caused by ligand and pH variation of the distal site.