Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
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- Pages.385-385
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- 2012
Bi-directional Two Terminal Switching Device based on SiGe for Spin Transfer Torque (STT) MRAM
- Yang, Hyung-Jun (Department of Electronic Computer & Communication Engineering, Hanyang University) ;
- Kil, Gyu-Hyun (Department of Electronic Computer & Communication Engineering, Hanyang University) ;
- Lee, Sung-Hyun (Department of Electronic Computer & Communication Engineering, Hanyang University) ;
- Song, Yun-Heub (Department of Electronic Computer & Communication Engineering, Hanyang University)
- Published : 2012.02.08
Abstract
A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with