Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Preparation and Electrical Characteristics of BST Thin Film by Spin-Coating Method

회전코팅법을 이용한 BST 박막의 제조 및 전기적 특성에 관한 연구

  • Ki, Hyun-Chul (Dept of Electrical Engineering, Chonnam national University) ;
  • Kim, Duck-Keun (Dept of Electrical Engineering, Chonnam national University) ;
  • Lee, Seung-Woo (Dept of Electrical Engineering, Chonnam national University) ;
  • Hong, Kyung-Jin (Dept of Electrical Engineering, Chonnam national University) ;
  • Lee, Jin (Dept of Electrical Engineering, Mokpo National University) ;
  • Kim, Tae-Sung (Dept of Electrical Engineering, Chonnam national University)
  • 기현철 (전남대학교 전기공학과) ;
  • 김덕근 (전남대학교 전기공학과) ;
  • 이승우 (전남대학교 전기공학과) ;
  • 홍경진 (전남대학교 전기공학과) ;
  • 이진 (목포대학교 전기공학과) ;
  • 김태성 (전남대학교 전기공학과)
  • Published : 1999.11.20
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Abstract

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].

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