• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.43-47
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• 2006

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.60-64
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• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1817-1819
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• 2004

From the plasma application point of view, electron temperature and density are one of the most important parameters for plasma process. But it is only available to control plasma by adjusting external factors like gas pressure and input power. In this paper, pulse-modulated plasma is generated by modulating 13.56GHz RF power with 1, 5, 10kHz pulse. And Langmuir probe technique is used to study the distribution of electron temperature and density. When modulated pulse is off, electron temperature decreases gradually in form of exponential decay. The value t of exponential decay slope is 33.619, 13.834, 10.803 in 1kHz. 5kHz. 10kHz. This implies that this method can be used to control electron temperature and density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.1-6
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• 2002

Plasma processing of semiconductor materials plays a dominant role in microelectronic technology. During last century, plasma have gone a way from laboratory phenomena to industrial applications due to intensive progress in both scientific and industrial trends. Improvement and development of new experience together with development of plasma theory and plasma diagnostics methods. A most parameters (pressure, flow rate, power density) and various levels of plasma system (energy distribution, volume gas chemistry, transport, heterogeneous effects) to understand the whole process mechanism. It will allow us to choose a correct ways for processes optimization.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.748-751
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• 2003

The electron temperature and plasma density in coplanar alternating-current plasma display panels (AC-PDPs) have been experimentally investigated by a micro Langmuir probe and the high speed discharge images in this experiment.

• Korean Chemical Engineering Research
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• v.59 no.2
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• pp.254-259
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• 2021

Optical and electrical characteristics of the fluorocarbon films deposited in a high-density C4F8 plasma under various source powers and pressures were investigated. The F/C ratio of the fluorocarbon film deposited in a high-density C4F8 plasma increased with increasing source power and decreasing pressure due to two-step deposition mechanism. The change in the F/C ratio of the film directly affected the optical and electrical characteristics of the fluorocarbon films deposited in a high-density C4F8 plasma. The refractive index of the fluorocarbon film increased with decreasing source power and increasing pressure contrary to the dependence of the film's F/C ratio on the source power and pressure. This was because the increase in the F/C ratio suppressed electronic polarization and weakened the network structures of the film. The resistivity of the fluorocarbon film showed the same behavior as its F/C ratio. In other words, the resistivity increased with increasing source power and decreasing pressure, resulting from stronger repellence of electrons at higher F/C ratios. This work offers the feasibility of the use of the fluorocarbon films deposited in a high-density C4F8 plasma as an alternative to low dielectric constant materials because the optical and electrical properties of the fluorocarbon film can be directly controlled by its F/C ratio.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.106-117
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• 1998

Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.142-146
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• 2006

A novel internal-type linear inductive antenna, which we refer to as a double comb-type antenna, was developed for a large-area plasma source with substrate size of $880\;mm{\times}660\;mm$ ($4^{th}$ generation glass size). In this study, effect of plasma confinement by applying multi-polar magnetic field was investigated. High density plasmas of the order of $3.18{\times}10^{11}\;cm^{-3}$ could be obtained with a pressure of 15 mTorr Ar at an inductive power of 5000 W with good plasma stability. This plasma density is higher than that obtained for the conventional double comb-type antenna, possibly due to the plasma confinement, low rf voltage, resulting in high power transfer efficiency. Also, due to the remarkable reduction in the antenna rf voltage and length, a plasma uniformity of less than 3% could be obtained within a substrate area of $880\;mm{\times}660\;mm$ as rf power increased.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.87-92
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• 1997

Inductively coupled Cl$_{2}$ plasma has been studied to etch Pt thin films, which hardly form volatile compound with any reactive gas at normal process temperature. Low etch rate and residue problems are frequently observed. For higher etch rate, high density plasma and higher process temperature is adopted observed. For higher etch rate, high density plasma and higher process temperature is adopted and thus SiO$_{2}$ is used as for patterning mask instead of photoresist. The effect of O$_{2}$ or Ar addition to Cl$_{2}$ was investigated, and the chamber pressure, gas flow rate, surce RF power and bias RF power are also varied to check their effects on etch rate and selectivity. The major etching mechanism is the physical sputtering, but the ion assisted chemical raction is also found to be a big factor. The proposs can be optimized to obtain the etch rate of Pt up to 200nm/min and selectivity to SiO$_{2}$ at 2.0 or more. Patterning of submicron Pt lines are successfully demonstrated.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.