Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 7 Issue s1
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- Pages.106-117
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- 1998
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- 1225-8822(pISSN)
A Formation of the $Fluorocarbonated-SiO_2$ Films on Si(100) ASubstrate by $O_2/FTES-High$ Density Plasma CVD
- Oh, Kyoung-Suk (Dept. of Physics, Cheju National University) ;
- Kang, Min-Sung (Dept. of Physics, Cheju National University) ;
- Lee, Kwang-Man (Dept. of Electronic Eng., Cheju National University) ;
- Kim, Duk-Soo (Dept. of Chemistry, Cheju National University) ;
- Kim, Doo-Chul (Dept. of Physics, Cheju National University) ;
- Choi, Chi-Kyu (Dept. of Physics, Cheju National University) ;
- Yun, Seak-Min (Dept. of Physics, Korea Advanced Institute of Science and Technology) ;
- Chang, Hong-Young (Dept. of Physics, Korea Advanced Institute of Science and Technology)
- Published : 1998.07.01
Abstract
Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi
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