• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 전기학회논문지P
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• 제61권3호
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• pp.116-121
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• 2012

Recently, in the field of renewable energy such as solar cells including the semiconductor and display industries, thin film deposition process is being diversified. Furthermore, to deal with trend of making high-quality and fast, the high-capacity and output plasma power supply which can control high density plasma is required. The biggest problem is arc discharge caused by using high voltage power supply. Thus, the key function of plasma power supply is to prevent arc discharge and there is a need to maintain the possible minimum arc energy. In DC sputtering power supply, on a periodic basis (-)voltage powering up is able to significantly reduce arcing, as well as arc discharge prevention, and maintaining uniform charge density. This conventional method for powering up (-)voltage requires heavy mutual inductance of the transformer to avoid distortion problem of the output voltage. This study is about energy recovery circuit for arc discharge prevention in sputtering plasma power supply. By using energy recovery circuit, it is possible to reduce the mutual inductance and size of the transformer dramatically, prevent distortion of the output voltage and has a stable output waveform. This work was proved through simulation and experimental study.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1561-1563
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• 2004

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and tan${\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4},\;2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan${\delta}$ of XLPF/ semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan${\delta}$ was small.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2007년도 추계학술연구발표회 및 정기총회
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• pp.42-42
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.339-344
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• 2014

This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) $0.18{\mu}m$. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately $1.6{\Omega}$. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

• 농업과학연구
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• 제38권3호
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• pp.525-532
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• 2011

The aim of this study was to develop a portable electronic nose system for freshness measurement of meats, which could be an alterative of subjective measurements of human nose and time-consuming measurements of conventional gas chromatograph methods. The portable electronic system was o optimized by comparing the measurement sensitivity and hardware efficiency, such as power consumption and dimension reduction throughout two stages of the prototypes. The electronic nose systems were constructed using an array of four different metal oxide semiconductor sensors. Two different configurations of sensor array with dimension were designed and compared the performance respectively. The final prototype of the system showed much improved performance on saving power consumption and dimension reduction without decrease of measurement sensitivity of pork freshness. The results show the potential of constructing a portable electronic system for the measurement of meat quality with high sensitivity and energy efficiency.

• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.35-38
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• 2005

Due to high permeability of the ferrite cores, the characteristics of the inductively coupled plasma(ICP) are expected to be greatly improved. We investigated the effect of the ferrite cores on conventional inductively coupled plasma. It was observed that the current and voltage in the ICP antenna are slightly decreased and the power transfer efficiency is increased. However, due to eddy current and hysteresis loss, plasma density in the ICP with the ferrite cores is not increased. It seems that the ICP with the ferrite cores at low frequency ($\∼$100 kHz) will be greatly improved since the losses at the low frequency can be negligible.

• 반도체디스플레이기술학회지
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• 제5권3호
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• pp.11-16
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• 2006

A low cost PDP sustain power supply is proposed based on flyback topology. By using Boundary Conduction Method(BCM) to control input current regulation, DCM condition can be met under all load conditions. Another feature of the proposed method is that a excessive voltage stress due to the link voltage increase can be suppressed by removing link capacitor and suggest new 'Level-shifting switch driver'. this new gate driver is improved 66% of efficiency than switching loss of a existed push-pull amplifier. The proposed converter is tested with a 400W(200V-2A output) prototype circuit.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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• pp.63-66
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• 2005

A soft error rate neutrons is a growing problem for integrated circuits with technology scaling. In the acceleration test with high-density neutron beam, a latch-up prohibits accurate estimations of the soft error rate (SER). This paper presents results of analysis for the latch-up characteristics in the circumstance corresponding to the acceleration SER test for SRAM. Simulation results, using a two-dimensional device simulator, show that the deep p-well structure has better latch-up Immunity compared to normal twin and triple well structures. In addition, it is more effective to minimize the distance to ground power compared with controlling a path to the $V_{DD}$ power.