JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Design of BJT-based ESD Protection Device combining SCR for High Voltage Power Clamps

  • Jung, Jin-Woo (Department of Electronics and Electrical Engineering, Dankook University) ;
  • Koo, Yong-Seo (Department of Electronics and Electrical Engineering, Dankook University)
  • Received : 2014.01.28
  • Accepted : 2014.04.05
  • Published : 2014.06.30
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Abstract

This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) $0.18{\mu}m$. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately $1.6{\Omega}$. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

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References

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