Effect of Post-Oxidation Annealing on High-Temperature Grown $SiO_2/4H-SiC$ Interface

  • Moon, Jeong-Hyun (Department of Materials Science and Engineering, Seoul National University) ;
  • Song, Ho-Keun (Department of Materials Science and Engineering, Seoul National University) ;
  • Yim, Jeong-Hyuk (Department of Materials Science and Engineering, Seoul National University) ;
  • Oh, Myeong-Suk (Department of Materials Science and Engineering, Seoul National University) ;
  • Lee, Jong-Ho (Department of Materials Science and Engineering, Seoul National University) ;
  • Bahng, Wook (Power Semiconductor Research Group, Korea Electrotechnology Research Institute (KERI)) ;
  • Kim, Nam-Kyun (Power Semiconductor Research Group, Korea Electrotechnology Research Institute (KERI)) ;
  • Kim, Hyeong-Joon (Department of Materials Science and Engineering, Seoul National University)
  • Published : 2007.11.16