• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1056-1061
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• 2007

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.

• Proceedings of the KSR Conference
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• 2006.11b
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• pp.755-770
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• 2006

1974. 8.15 SeoulMetro, beginning with the first electric railway established at six cities, so it is managing mass transportation of traffic. Especially, in case of seoul, It is managing that from one to eight lines, 286.9km, 265 stations have installed and now it is carrying about 5.5million of passengers everyday, and 2,000million passengers a year. So accident is increasing from the station every year. For this measure, SeoulMetro prepares safety fence for passengers crash but, as suicides or people who watch the accident took place, for at the bottom of passengers crash protection, PSD installing is needed. Even though, PSD is managing ATO section but, in controlling SeoulMetro, one to four lines sections are (ATS, ATC)section. Between as ATS, ATC section, ATO section, subway gate and PSD must have opened and crossed always at the time. And the interlock control corrosion protection gate, managing skills with installation, method, using in history, apply to 10rail cars one train sets, and maximum applying 224% sections of passengers congested that consideration is to be needed. So 2004, SeoulMetro improved technology and basic design of PSD at ATS section. Based on this, from 2005.4 to 2006.6, using subway 2lines per 12stations set the model installation(full type 11stations, half type 1station) After installing in case of success, it is going about to suggest that effective analysis and hereafter subject.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.14 no.3
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• pp.235-239
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• 1989

A multiplier is proposed for computing multiplication of two arbitrary elements in the finite fields GF($2^m$), and the operation process is described step by step. The modified type of the circuit which is constructed with m-stage feedgack shift register, m-1 flip-flop, m AND gate, and m-input XOR gate is presented by referring to the conventional shift-register multiplier. At the end of mth shift, the shift-register multiplier stores the product of two elements of GF($2^m$); however the proposed circuit in this paper requires m-1 clock times from first input to first output. This circuit is simpler than cellulra-array or systolic multiplier and moreover it is faster than systolic multiplier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.4
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• pp.88-95
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• 2015

This paper presents a new analysis of RF negative resistance (RFNR) circuits, known as a negative resistance generator. For accurate equation analysis of RFNR, this study examined the effects of the gate resistance and the source parasitic capacitance of the transistor. In addition, the input admittance of the conventional equation was calculated by looking into the source-terminal of the transistor, whereas that of the proposed equation was calculated by examining the gate-terminal of the transistor. The proposed equation analysis is more accurate than that of the conventional analysis, especially for higher frequency range. This paper verify the accuracy of the proposed analysis at high frequency range using the simulation.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.2
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• pp.70-75
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• 2016

This paper proposes the constructing method of effective multiplier based on the finite fields in case of P=2. The proposed multiplier is constructed by polynomial arithmetic part, mod F(${\alpha}$) part and modular arithmetic part. Also, each arithmetic parts can extend according to m because of it have modular structure, and it is adopted VLSI because of use AND gate and XOR gate only. The proposed multiplier is more compact, regularity, normalization and extensibility compare with earlier multiplier. Also, it is able to apply several fields in recent hot issue IoT configuration.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.3
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• pp.201-206
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• 2019

This study presents the design and experimental result of a GaN-based DC-DC converter with an integrated gate driver. The GaN device is attractive to power electronic applications due to its superior device performance. However, the switching loss of a GaN-based power converter is susceptible to the common source inductance, and converter efficiency is severely degraded with a large loop inductance. The objective of this study is to achieve high-efficiency power conversion and the highest power density using a multiphase integrated half-bridge GaN solution with minimized loop inductance. Before designing the converter, several GaN and Si devices were compared and loss analysis was conducted. Moreover, the impact of common source inductance from layout parasitic inductance was carefully investigated. Experimental test was conducted in buck mode operation at 48 -12 V, and results showed a peak efficiency of 97.8%.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.17 no.2
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• pp.486-503
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• 2023

Logs play an important role in mastering the health of the system, experienced operation and maintenance engineer can judge which part of the system has a problem by checking the logs. In recent years, many system architectures have changed from single application to distributed application, which leads to a very huge number of logs in the system and manually check the logs to find system errors impractically. To solve the above problems, we propose a method based on Message Middleware and ATT-GRU (Attention Gate Recurrent Unit) to detect the logs anomaly of distributed systems. The works of this paper mainly include two aspects: (1) We design a high-performance distributed logs collection architecture to complete the logs collection of the distributed system. (2)We improve the existing GRU by introducing the attention mechanism to weight the key parts of the logs sequence, which can improve the training efficiency and recognition accuracy of the model to a certain extent. The results of experiments show that our method has better superiority and reliability.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.17 no.1
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• pp.165-184
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• 2023

The ARX-based lightweight block cipher is widely used in resource-constrained IoT devices due to fast and simple operation of software and hardware platforms. However, there are three weaknesses to ARX-based lightweight block ciphers. Firstly, only half of the data can be changed in one round. Secondly, traditional ARX-based lightweight block ciphers are static structures, which provide limited security. Thirdly, it has poor diffusion when the initial plaintext and key are all 0 or all 1. This paper proposes a new dynamic ARX-based lightweight block cipher to overcome these weaknesses, called DABC. DABC can change all data in one round, which overcomes the first weakness. This paper combines the key and the generalized two-dimensional cat map to construct a dynamic permutation layer P1, which improves the uncertainty between different rounds of DABC. The non-linear component of the round function alternately uses NAND gate and AND gate to increase the complexity of the attack, which overcomes the third weakness. Meanwhile, this paper proposes the round-based architecture of DABC and conducted ASIC and FPGA implementation. The hardware results show that DABC has less hardware resource and high throughput. Finally, the safety evaluation results show that DABC has a good avalanche effect and security.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.285-291
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• 2013

In this paper, MOS-Capacitor and MOSFET devices with a Low Level Leakage Current of oxide thickness, channel width and length respectively were to investigate the reliability characterizations mechanism of ultra thin gate oxide films. These stress induced leakage current means leakage current caused by stress voltage. The low level leakage current in stress and transient current of thin silicon oxide films during and after low voltage has been studied from strss bias condition respectively. The stress channel currents through an oxide measured during application of constant gate voltage and the transient channel currents through the oxide measured after application of constant gate voltage. The study have been the determination of the physical processes taking place in the oxides during the low level leakage current in stress and transient current by stress bias and the use of the knowledge of the physical processes for driving operation reliability.