• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.705-707
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• 2011

Smart devices have the characteristics of duality of fire and the property of double-sided swords. They also both conveniency and the weakness at a time due to the structure of the devices. Although there have not been a big threat with the smart devices, but they have potential enough to destroy the network society. This is because of the fact that the devices mainly depend on the applications and the applications can abuse the devices' critical hardware sections such as camera, file system, etc.. In this contribution, we analyze the issues and the problems of the weakness of smart devices and discuss a method to solve the issues.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.7-8
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• 2006

The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.616-619
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• 2004

Lightning surge damages of low voltage equipments in building are increasing due to increase in electrical and communication networks in the information-oriented society. And electronic equipments contained electrical circuits with semiconductor are very weak against lightning surge. The surge protective devices for electronic circuit in electronic equipments and AC power lines are becoming more widely. To achieve effective method of surge protection, there are needs for correlation between lightning surge protective effect of electronic equipment and installation method of surge protective device. This paper describes as a result of experiments for correlation between lightning surge protective effect and installation method of surge protective device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.340-343
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.889-895
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• 2002

Wafer level packaging is gain mote momentum as a low cost, high performance solution for RF-MEMS devices. In this work, the flip-chip method was used for the wafer level packaging of RF-MEMS devices on the quartz substrate with low losses. For analyzing the EM (electromagnetic) characteristic of proposed packaging structure, we got the 3D structure simulation using FEM (finite element method). The electric field distribution of CPW and hole feed-through at 3 GHz were concentrated on the hole and the CPW. The reflection loss of the package was totally below 23 dB and the insertion loss that presents the signal transmission characteristic is above 0.06 dB. The 4-inch Pyrex glass was used as a package substrate and it was punched with air-blast with 250${\mu}{\textrm}{m}$ diameter holes. We made the vortical feed-throughs to reduce the electric path length and parasitic parameters. The vias were filled with plating gold. The package substrate was bonded with the silicon substrate with the B-stage epoxy. The loss of the overall package structure was tested with a network analyzer and was within 0.05 dB. This structure can be used for wafer level packaging of not only the RF-MEMS devices but also the MEMS devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.232.1-232.1
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• 2014

The green displays are the human friendly displays, the nature friendly displays, and the economical displays. Electrochromic displays are low cost and environmental devices because they do have more choice of colours and use much less power. The elements of the electrochromic devices consist of at least two conductors, an electrochromic material and an electrolyte. The optical properties were obtained using the optical contrast between the transparency of the substrate and the coloured state of the electrochromic materials. These devices can be fully flexible and printable. Due to the characteristics of the high coloration efficiency and memory effects, the electrochromic devices have been used in various applications such as information displays, smart windows, light shutters and electronic papers. Among these technical fields switchable mirrors have been received much attention in the applicative point of view of various electronic devices production. We have developed a novel silver (Ag) deposition-based electrochromic device for the reversible electrodeposition (RED) system. The electrochromic device can switch between transparent states and mirror states in response to a change in the applied voltage. The dynamic range of transmittance percent (%) for the fabricated device is about 90% at 550 nm wavelength. Also, we successfully fabricated the large area RED display system using the parted electrochromic cells of the honey comb structure.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.11 s.242
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• pp.1229-1238
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• 2005

The objective of the present study was to investigate the efficacy of physical water treatment (PWT) technologies using different catalytic materials and an electronic anti-fouling device in the mitigation of mineral fouling in a once-through flow system with mini-channel heat exchanger. Effects of flow velocity and water hardness on the effectiveness of PWT technologies were experimentally studied. The artificial water hardness varied from 5.0 to 10 mo1/m$^{3}$ as CaCO$_{3}$. For 10 mo1/m$^{3}$ solution, fouling resistance reduced by 13-40$\%$ depending on flow velocity and types of PWT devices. On the other hand, fouling resistance reduced by 21-29$\%$ depending on the PWT devices for 5 mo11m3 solutions. The PWT device using alloy of Cu and Zn as catalyst (CM2) was slightly more effective than the others. SEM photographs of scale produced from the 10 mol/m$^{3}$ solution at 1.0 m/s indicated that calcium carbonate scales without PWT devices were needle-shaped aragonite, which is sticky, dense and difficult to remove. Scales with the PWT devices showed a cluster of spherical or elliptic shape crystals. Both the heat transfer test results and SEM photographs strongly support the efficacy of PWT technologies using catalytic materials and an electronic anti-fouling device in the mitigation of mineral fouling.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.43-50
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• 2016

NAND flash based storage devices adopts multi-channel and multi-way architecture to improve performance using parallel operation of multiple NAND devices. However, multiple NAND devices consume higher current and peak power overlap problem influences on the system stability and data reliability. In this paper, current waveform is measured for erase, program and read operations, peak current and model is defined by profiling method, and estimated probability of peak current overlap among NAND devices. Also, system level TLM simulator is developed to analyze peak overlap phenomenon depending on various simulation scenario. In order to remove peak overlapping, token-ring based simple power management method is applied in the simulation experiments. The optimal peak overlap ratio is proposed to minimize performance degradation based on relationship between peak current overlapping and system performance.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.12
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• pp.1321-1328
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• 2015

A radio is a half-duplex voice communication method using the PTT(: Push To Talk), occupy a single line calls during transmission. As an interface between the telephone and the radio, UHF and VHF, for voice communication between the different heterogeneous devices, A device automatically switches between the two devices is required. Therefore, in accordance with the performance of the voice switching apparatus for detecting a voice to be transmitted from an input signal, loss of the audio signal to be transmitted is subjected to Significant influence. Conventional method has the problem responding to noise by setting the level through simple means of amplitude of input signal, in other words, the energy level of the input signal. This paper, by using the audio signal processing techniques, this discriminated what the voice is among the input signal and substantiated a device for the automatic voice transmission between heterogeneous devices. With this proposal, I was confirmed of improvement of performance in the automatic voice switching device, could perform loss-less transmission of voice between heterogeneous devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.91-96
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• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.