• Title/Summary/Keyword: Electron diffusion

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A Study on the Electron Transport Coefficients in Hydrogen Molecular ($H_2$의 전자 수송 계수에 관한 연구)

  • Park, Eun-Joo;Jeon, Byung-Hoon
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1402_1403
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    • 2009
  • The electron transport coefficients in hydrogen molecular is calculated over the range of E/N values from 0.01 to 300 Td and at temperature state of 77K, 293K and 300K by Boltzmann equation method. The results gained that the values of the electron transport coefficients such as the electron drift velocity, the electron ionization coefficients, longitudinal diffusion coefficients consisted with the results of measured and calculated for a ranage of E/N.

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Analysis of Electron Transport Coefficients in Low Voltage Air Circuit Breaker Using MCS and BE (몬테칼로 시뮬레이션과 볼츠만 방정식을 이용한 저전압 기중차단기의 전자수송계수 특성파악)

  • 하성철;서상현
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.2
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    • pp.168-172
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    • 2003
  • The electron transport coefficients in Air is analysed in range of E/Nvalues from 100~1000(Td) by a MCS and BE method. This paper have calculated W, ND$\sub$L/, ND$\sub$T/, Mean energy mixtures by N$_2$+O$_2$. The results gained that the values of the electron swarm parameters such as the electron drift velocity, longitudinal and transverse diffusion coefficients.

Permittivity of Solid State Electron Plasma Including the Effect of Diffusion (고상전자 프라즈마의 유도율과 확산현상과의 관계)

  • Cho, Chul
    • 전기의세계
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    • v.20 no.6
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    • pp.19-21
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    • 1971
  • Permittivities are closely related to lattice vibrations and dispersions relations, and this paper deals with the tensor permittivities which include the effect of diffusion. It is a great convenience in the consideration of plasma waves to treat the plasma as a dielectric medium with its circumference. And, on the assumption that the motion of the ionized donors be neglected the general expression from which the tensor permittivity can be derived is derived from the view point that the plasma can be treated as a hydrodynamical fluid. The effect of diffusion appears as perturbation terms in the tensor permittivities of the non-streaming solid state electron magnetoplasmas and affects no influence on the anisotropic terms in the specific configuration.

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Characteristics of Wave Propagation in an Unbounded Solid State Electron Plasma (무한고상전자프라즈마내에서의 전파전파특성)

  • Cho, Chul
    • 전기의세계
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    • v.22 no.3
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    • pp.35-48
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    • 1973
  • This paper deals with wave propagations in solid state electron plasmas from the view point of treating the plasma as a conducting fluid, and especially consideration is extended to the effect of diffusion on the permittivities and dispersion relations. The analysis is based on the conception of the self-consistent field approximation. It is shown for the cases of the specific physical configurations that the positions of the null elements in the permittivity tensors are not affected by the diffusion terms, and the diffusion effect appears only in the case of the space-charge wave. It is also shown that the magnitude of the real part of wave vector is in proportion to the 3/2nds power of the field in some regions.

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In Situ Transmission Electron Microscopy Study on the Reaction Kinetics of the Ni/Zr-interlayer/Ge System

  • Lee, Jae-Wook;Bae, Jee-Hwan;Kim, Tae-Hoon;Shin, Keesam;Lee, Je-Hyun;Song, Jung-Il;Yang, Cheol-Woong
    • Applied Microscopy
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    • v.45 no.1
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    • pp.16-22
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    • 2015
  • The reaction kinetics of the growth of Ni germanide in the Ni/Zr-interlayer/Ge system was investigated using isothermal in situ annealing at three different temperatures in a transmission electron microscope. The growth rate of Ni germanide in the Ni/Zr-interlayer/Ge system was determined to be diffusion controlled and depended on the square root of the time, with the activation energy of $1.04P{\pm}0.04eV$. For the Ni/Zr-interlayer/Ge system, no intermediate or intermixing layer between the Zr-interlayer and Ge substrate was formed, and thus the Ni germanide was formed and grew uniformly due to Ni diffusion through the diffusion path created in the amorphous Zr-interlayer during the annealing process in the absence of any intermetallic compounds. The reaction kinetics in the Ni/Zr-interlayer/Ge system was affected only by the Zr-interlayer.

Diffusion of co-sputtered refractory metal films at high temperature (Co-sputter로 증착된 core rod 대체물질의 고온 확산 현상)

  • Choi, Jun-Myoung;Song, Lee-Hwa;Kim, Hee-Young;Park, Seung-Bin
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.11a
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    • pp.301-304
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    • 2007
  • 다결정 태양전지의 원료인 폴리실리콘을 생산하는 방법 중 하나인 지멘스 방법에서 사용되는 실리콘 코어로드를 금속 계열의 코어로드로 대체하기 위한 연구를 진행하였다. 본 연구에서는 실리콘 코어로드의 대체물질 후보로서 고융점 금속인 텅스텐, 탄탈륨, 몰리브덴을 선택하였고, co-sputtering system을 이용하여 다성분계의 박막을 실리콘 기판에 증착시켜 $800^{cdot}C$에서 $1000^{cdot}C$의 고온에서 열처리 후 박막의 형상변화 및 확산정도를 관찰하였다. 열처리 온도에 따른 박막의 형상 및 확산 정도를 관찰하기 위하여 Scanning electron microscopy (SEM), X-ray diffractometer(XRD), transmission electron microscopy(TEM), auger electron spectroscopy(AES)가 사용되었다.

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Reaction diffusion and formation of$Ni_3Al$ phase at the Ni-NiAl diffusion couple (Ni-NiAl 확산대에서 $Ni_3Al$ 상의 형성과 반응확산)

  • 정승부
    • Journal of Welding and Joining
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    • v.15 no.3
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    • pp.128-135
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    • 1997
  • Reaction diffusion and formation of $Ni_3Al$phase with $L1_2$ structure have been studied in temperature range of 1432K to 1573K using the diffusion couple of (Ni-40, 5at%Al)/(Ni-14, 1at%Al) and (Ni-49, 2at%Al)/ (Nickel). The layer growth of Ni$_{3}$Al pyhase in the annealed diffusion couple was measured by optical microscope and electron probe microanalyzer (EPMA). The layer growth of $Ni_3Al$phase in diffusion zone obeyed the parabolic law without any indication of grain boundary effects. The layer growth of $Ni_3Al$phase in temperature range of 1423K to 1573K was mainly controlled by the volume diffusion mechanism. The rate of layer growth of $Ni_3Al$phase was found to be colsely related to the composition of intermetallic compound NiAl phase. The activation energy for layer growth of $Ni_3Al$phase was calculated to be 127kJ/mol.

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The simulation of electrons swarm parameter in He gas is used by Boltzman equation (볼츠만 방정식을 이용한 Helium 가스의 전자군 파라미터 시뮬레이션)

  • 송병두;하성철;김대연
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.155-158
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    • 1998
  • This paper is calculated at electron swarm simulation by Back Prolongation of Boltzmann equation for range of E/N values from 0.1~200[Td], pressure P= 1.0[Torr], temperature T=300[ 。K], the electron swarm parameter(drift velocity, longitudinal . transverse diffusion coefficients, characteristic energy, etc) in He gas is used by electron collision cross section, particularly explicate the simulation technique, and consider electrical conduction characteristic of He gas.

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A theoretical approach to the preferred orientation formation of MgO protection layer using adatom diffusion

  • Yu, Hak-Ki;Lee, Jong-Lam
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.713-715
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    • 2009
  • Preferred orientation of MgO protection layer is controlled via adjusting diffusion of adatom between (111) plane with highest neighbor atoms and (200) plane with lowest neighbor atoms. The diffusion of adatom could be modulated by the factors such as substrate temperature, deposition rate, and extra energy applied on adatom like ion beam energy.

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Monte carlo simulation for electron transport characteristics in sulphur hexaflouride ($SF_6$ 가스의 전자수송특성에 관한 몬테칼로시뮬레이션)

  • 하성철;서상현
    • Electrical & Electronic Materials
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    • v.9 no.7
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    • pp.660-667
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    • 1996
  • The electron transport characteristics in $SF_6$ gas is calculated for range of E/N values from 150 -800(Td) by the Monte Carlo simulation using a set of electron collision cross sections determined by the authors. The results suggest that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in sulphur hexaflouride at E/N:500 and 800(Td) for a case of the equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a Time of Flight method also investigated as a set of electron collision cross section for sulphur Hexaflouride.

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