• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.36-41
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• 2023

We investigated the properties of vanadium oxide (VOx) buffer layers deposited by a dual RF magnetron sputtering method under various target powers for inverted organic solar cells (IOSCs). Sputter fabricatged VOx thin films exhibited higher crystallinity with the increase of target power, resulting in a uniform and large grain size. The electrical properties of VOx films are improved with the increase of target power because of the increase of V content. In the results, the performance of IOSCs critically depended on the target power during the film growth because the crystalllinity of the VOx film affects the carrier mobility of the VOx film.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.10
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• pp.79-86
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• 2004

This paper proposes a dual band Voltage Controlled Oscillator(VCO) with a standard 0.3${\mu}{\textrm}{m}$ CMOS process to generate 1.07GHz and 2.07GHz. The proposed VCO architecture with 50% duty cycle circuit and a half adder(HA) was capable of producing a frequency two times higher than that of the conventional VCOs. The measurement results demonstrate that the gain of VCO and power dissipation are 561MHz/V and 14.6mW, respectively. The phase noises of the dual band VCO are measured to be -102.55dBc/Hz and -95.88dBc/Hz at 2MHz offset from 1.07GHz and 2.07GHz, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.113-114
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• 2007

Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.

• Journal of KIISE
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• v.43 no.2
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• pp.177-185
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• 2016

In this paper, we propose a hybrid write buffer architecture comprised of DRAM and NVRAM on SSD and a write buffer algorithm for the hybrid write buffer architecture. Unlike other write buffer algorithms, the proposed algorithm considers read pages as well as write pages to improve the performance of storage devices because most actual workloads are read-write mixed workloads. Through effectively managing NVRAM pages, the proposed algorithm extends the endurance of SSD by reducing the number of erase operations on NAND flash memory. Our experimental results show that our algorithm improved the buffer hit ratio by up to 116.51% and reduced the number of erase operations of NAND flash memory by up to 56.66%.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.2
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• pp.140-145
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• 2002

A new CMOS buffer removing short-circuit power consumption is proposed. The gate-driving signal of the pull-up(pull-down) transistor at the output is controlled by delayed internal signal to get tri-state output momentarily by shunting off the path of the short-circuit current. The SPICE simulation results verified the operation of the proposed buffer and showed the enhancement of the power-delay product at 3.3V supply voltage about 42% comparing to the conventional tapered CMOS buffer(1).

• IEMEK Journal of Embedded Systems and Applications
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• v.10 no.3
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• pp.151-156
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• 2015

Recently, an embedded flash memory has been widely used for the Internet of Things(IoT). Due to its nonvolatility, economical feasibility, stability, low power usage, and fast speed. With respect to power consumption, the embedded memory system must consider the most significant design factor. The objective of this research is to design high performance and low power NAND flash memory architecture including a dual buffer as a replacement for NOR flash. Simulation shows that the proposed NAND flash system can achieve better performance than a conventional NOR flash memory. Furthermore, the average memory access time of the proposed system is better that of other buffer systems with three times more space. The use of a small buffer results in a significant reduction in power consumption.

• Journal of the Korea Society of Computer and Information
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• v.16 no.2
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• pp.1-8
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• 2011

NAND type Flash memory has performing much researches for a hard disk substitution due to its low power consumption, cheap prices and a large storage. Especially, the NAND type flash memory is using general buffer systems of a cache memory for improving overall system performance, but this has shown a tendency to emphasize in terms of data. So, our research is to design a high performance instruction NAND type flash memory structure by using a buffer system. The proposed buffer system in a NAND flash memory consists of two parts, i.e., a fully associative temporal buffer for branch instruction and a fully associative spatial buffer for spatial locality. The spatial buffer with a large fetching size turns out to be effective serial instructions, and the temporal buffer with a small fetching size can achieve effective branch instructions. According to the simulation results, we can reduce average miss ratios by around 77% and the average memory access time can achieve a similar performance compared with the 2-way, victim and fully associative buffer with two or four sizes.

• Journal of the Korean Operations Research and Management Science Society
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• v.21 no.2
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• pp.17-33
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• 1996

Automatic transfer defined as an integrated system with a number of workstations, interstation storage buffers, automatic device and a control system, play a major role in ass production systems. Due to high capital investment needed for an automatic transferline, greater care should be taken in its design so as to maximize the system performance. One may to control the system performance is to control buffer storage. To control the interstation work-in-process inventory, we propose dual limit switches which control the buffer storage with two parameters, R and r. Under the policy, proceding station is forced down when the inventory level in the buffer reaches R until the level falls to r. For the model developed, we analyze the system characteristics and find the optimal control parameters with a serach procedure.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.1
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• pp.127-138
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• 1997

In this paper, we study new HOL-LJ scheme to guarantee the QoW of low priority cell with simple hardware which is not realizable in previously proposed HOL and HOL-PJ. the performance of the proposed scheme is evaluated by analysing an equivalent /M/M/1/N queuing system. In case of using the proposed scheme, we confirmed that good performance compared with HOL-PJ through simpulation and mathematical analysis. We also applied HOL-LJ algorithm to convetional Dual Buffer and Partial Buffer, and we analyzed the performance through computer simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.34-40
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• 2011

This paper presents a low-dropout (LDO) linear regulator using ultra-low output impedance buffer for frequency compensation. The proposed buffer achieves ultra low output impedance with dual shunt feedback loops, which makes it possible to improve load and line regulations as well as frequency compensation for low voltage applications. A reference control scheme for programmable output voltage of the LDO linear regulator is presented. The designed LDO linear regulator works under the input voltage of 2.5~4.5V and provides up to 300mA load current for an output voltage range of 0.6~3.3V.