• Title/Summary/Keyword: Deposition flux

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Room tempearture deposition of SiN film by using $SiH_4-NH_3-N_2$ plasma: Effect of duty ratio on Ion energy and Refractive index (펄스드 플라즈마를 이용한 $SiH_4-NH_3-N_2$에서의 SiN박막의 상온 증착 : Duty ratio 이온에너지와 굴절률에의 영향)

  • Lee, Hwa-Joon;Kim, Byung-Whan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.206-207
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    • 2009
  • PECVD를 이용하여 상온에서 Silicon nitride 박막을 제조하였다. 그리고 증착 중에 non-invasive ion energy analyzer를 이용하여 이온에너지와 이온에너지 flux룰 측정하였다. PECVD의 소스 파워는 500W, 바이어스 파워 100W으로 고정하고 주파수 250Hz으로 고정된 상태에서 펄스를 인가하여 duty ratio를 30-100%까지 변화시켰다. 작은 duty ratio 범위 (30-70%)에서 duty ratio가 감소할 때, 이온에너지와 이온에너지의 비가 감소하였다. 이 때 감소되는 굴절률은 저이온에너지 변수와 강한 연관성을 지니고 있었다. 굴절률은 1.65-2.46 사이에서 변화하였다.

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A Study on the microcooling Fin Fabrication Process for Enhancing Boiling Heat Transfer (비등열전달 향상을 위한 초소형 핀 제작공정에 관한 연구)

  • You, Sam-Sang;Lim, Tae-Woo;Jeong, Seok-Kwon;Park, Jong-Un
    • Journal of Fisheries and Marine Sciences Education
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    • v.19 no.3
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    • pp.366-372
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    • 2007
  • This paper presents the fabrication techniques of microcooling fins for microelectronics applications. The various types of cooling fins have been fabricated on the surface of a silicon wafer (4inch-N type) by using wet etching technique. The designed micro fins and micro channels are considered as an effective method for cooling microelectronics devices generating high heat flux. Further we extensively investigate the design processes fabricating micro fins and channels which can cool the heat generated from high density electronics devices.

Dielectric Passivation Effects on the Electromigration Phenomena for the Improvement of Microelectronic Thin Film interconnection Materials (극미세 전자소자 박막배선 재료 개선을 위한 엘렉트로마이그레이션 현상에 미치는 절연보호막 효과)

  • 박영식;김진영
    • Journal of the Korean Vacuum Society
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    • v.5 no.2
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    • pp.161-168
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    • 1996
  • For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the $SiO_2$ layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/$SiO_2$ dielectric passivation layers showed longer lifetime than $Si_3N_4$ dielectric passivation layers. This results from the PSG on $SiO_2$ layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.

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Improvement of Dry Deposition Flux Estimation Methodologies Using Surrogate Surface (대체표면법을 이용한 건성침적량의 평가방법론의 개선)

  • 정장표;장영환;조효정;이승묵
    • Proceedings of the Korea Air Pollution Research Association Conference
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    • 2003.11a
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    • pp.271-272
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    • 2003
  • 대기침적은 대기중으로 방출된 오염물질의 이동과 그 영향을 조절하는 중요한 기작으로서, 현상론적인 형태에 따라 습성침착 및 건성침착으로 구분된다. 이러한 대기침착 현상은 수질의 악화, 건강 및 생태학적 약영향을 초래하는 중요한 요소로 작용할 뿐만 아니라, 최근 우리나라를 비롯한 동북아시아지역에서의 대기오염물질의 장거리 이동현상의 정확한 규명을 위한 노력의 일환으로 그 관심이 모아지고 있다. 따라서 건성침적현상에 의한 환경적인 악영향을 줄이기 위한 대처방안을 효과적으로 수립ㆍ시행하기 위해서는 먼저 그 영향 정도를 규명해 낼 수 있는 측정장치의 개발 및 분석평가 방법의 정립이 필수적이다. (중략)

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Theory of Charged Clusters as New Understanding of Thin Film Growth

  • Hwang, Nong-Moon;Kim, Doh-Yeon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.147-152
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    • 2002
  • A new theory of thin film growth was suggested, where charged clusters of nanometer size are generated in the gas phase and are a major flux for thin films. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in metal evaporation. These results imply new insights as to the microstructure control of thin films. Based on this new understanding, the low temperature deposition of crystalline and amorphous silicon can be approached systematically.

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Effect of Oxygen Flux on FTO Thin Films Using DC and RF Sputtering

  • Park, Eun Mi;Lee, Dong Hoon;Suh, Moon Suhk
    • Applied Science and Convergence Technology
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    • v.24 no.2
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    • pp.41-46
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    • 2015
  • Transparent conductive oxides (TCOs) are essential material in optoelectronics such as solar cells, touch screens and light emitting diodes. Particularly TCOs are attractive material for infrared cut off film due to their high transparency in the visible wavelength range and high infrared reflectivity. Among the TCO, Indium tin oxide has been widely used because of the high electrical conductivity and transparency in the visible wavelength region. But ITO has several limitations; expensive and low environmental stability. On the other hands, fluorine doped tin oxide (FTO) is well known for low cost, weather ability and stable in acidic and hydrogen. In this study, two different magnetron sputtering techniques with RF and DC modes at room temperature deposition of FTO thin film was conducted. The change of oxygen content is influence on the topography, transmittance and refractive index.

The percutaneous absorption of antisense phosphorothioate oligonucleotide (ASPS) complementary to TGF-$\beta$ mRNA designed for scar formation inhibitor

  • Lee, Young-Mi;Lee, Sung-Hee;Kim, Su-Ung;Lee, Seong-Yong;Kim, Jaebaek;Sohn, Dong-Hwan
    • Proceedings of the Korean Society of Applied Pharmacology
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    • 1995.04a
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    • pp.129-129
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    • 1995
  • ASPS against TGF-${\beta}$ is developing as scar formation inhibitor. The scar was caused by undesired collagen deposition due to overexpression of TGF-${\beta}$ in wounded tissue. The in vitro percutaneous absorption of ASPS(25mer)was investigated by using Furanz Diffusion Cell. The flux of ASPS cannot be found through normal skin due to high molecular weight (MW 10,000) and polyanionic charge. However, the skin permeation of ASPS through tape-stripped damaged skin was markedly increased. The skin fluxs of ASPS were decreased in the following order; hairless mouse> rat >human cadaver skin.

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Deposition flux and Characteristics of Dustfall and Metallic Elements in Kunsan (군산지역에서의 강하분진 및 금속원소의 침착량 및 특성)

  • 강달선;차영희;송재종;김성천
    • Proceedings of the Korea Air Pollution Research Association Conference
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    • 1999.10a
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    • pp.23-24
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    • 1999
  • 분진은 그 안에 Pb, Cr, Cd, Zn등 각종 중금속 및 유해물질을 함유하고 있으며(Jaenicke, R., 1988), 이러한 조성은 분진의 발생원과 밀접한 관련이 있다. 또한, 분진의 물리, 화학적 특징들은 대기로의 배출정도나 화학적 변형 외에도 기상학적 인자들에 의해 영향을 받는다(Karakas와 Tuncel, 1997). 이러한 분진들은 최종적으로 지상에 낙하할때의 분진으로서 비교적 크기가 큰 강하분진과, 입자가 미세하고 가벼워서 좀처럼 침강하기 어려워 장기간 대기중에 떠 다니는 부유분진으로 나눌수 있으며, 이 중 강하분진은 대기중의 오염물질 중 자기 중량에 의해 또는 우적에 포함되어 침강하는 매연 및 분진과 그 외 불순물로서, 그 측정치는 일정지역에 있어서의 오염변동을 나타내고 지역적 비교의 지표로서 이용되고 있다(김은경등, 1996)(중략)

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Control of Contact Angle by Surface Treatment using Sanning Plasma Method (주사 플라즈마 법(SPM)을 이용한 소수성 표면처리)

  • Kim, Young-Gi;Choi, Byoung-Jung;Yang, Sung-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.1
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    • pp.10-13
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    • 2010
  • The plasma processing technologies of thin film deposition and surface treatment technique have been applied to many industrial fields. This study is purposed Large-area uniformity and surface treatment on the stainless substrate. We treat surface of stainless by $CF_4$ plasma. $CF_4$ plasma is generated by using SPM(Scanning plasma method)which is kind a of CVD. Generally, SPM has been used for uniform surface treatment using a crossed electromagnetic field. The optimum discharge condition has been studied for the gas pressure, the magnetic flux density and the distance between substrate and electrodes. In result, contact angle is increased by surface treatment using $CF_4$ Plasma. Therefore we expect that SPM to control contact angle is applied to many industries.