• Title/Summary/Keyword: D Latch

Search Result 58, Processing Time 0.025 seconds

A Radiation-hardened Model Design of CMOS Digital Logic Circuit for Nuclear Power Plant IC and its Total Radiation Damage Analysis (원전용 IC를 위한 CMOS 디지털 논리회로의 내방사선 모델 설계 및 누적방사선 손상 분석)

  • Lee, Min-Woong;Lee, Nam-Ho;Kim, Jong-Yeol;Cho, Seong-Ik
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.67 no.6
    • /
    • pp.745-752
    • /
    • 2018
  • ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.

Design of QCA Latch Using Three Dimensional Loop Structure (3차원 루프 구조를 이용한 QCA 래치 설계)

  • You, Young-Won;Jeon, Jun-Cheol
    • Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
    • /
    • v.7 no.2
    • /
    • pp.227-236
    • /
    • 2017
  • Quantum-dot cellular automata(QCA) consists of nano-scale cells and demands very low power consumption so that it is one of the alternative technologies that can overcome the limits of scaling CMOS technologies. Various circuits on QCA have been researched until these days, a latch required for counter and state control has been proposed as a component of sequential logic circuits. A latch uses a feedback loop to maintain previous state. In QCA, a latch uses a square structure using 4 clocks for feedback loop. Previous latches have been proposed using many cells and clocks in coplanar. In this paper, in order to eliminate these defects, we propose a SR and D latch using multilayer structure on QCA. Proposed three dimensional loop structure is based on multilayer and consists of 3 layers. Each layer has 2 clock differences between layers in order to reduce interference. The proposed latches are analyzed and compared to previous designs.

A Study on Improvement Latch-up immunity and Triple Well formation in Deep Submicron CMOS devices (Deep Submicron급 CMOS 디바이스에서 Triple Well 형성과 래치업 면역 향상에 관한 연구)

  • 홍성표;전현성;강효영;윤석범;오환술
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.35D no.9
    • /
    • pp.54-61
    • /
    • 1998
  • A new Triple well structure is proposed for improved latch-up immunity at deep submicron CMOS device. Optimum latch-up immunity process condition is established and analyzed with varying ion implantation energy and amount of dose and also compared conventional twin well structure. Doping profile and structure are investigated using ATHENA which is process simulator, and then latch-up current is calculated using ATLAS which is device simulator. Two types of different process are affected by latch-up characteristics and shape of doping profiles. Finally, we obtained the best latch-up immunity with 2.5[mA/${\mu}{m}$] trigger current using 2.5 MeV implantation energy and 1$\times$10$^{14}$ [cm$^{-2}$ ] dose at p-well

  • PDF

Design of 6bit CMOS A/D Converter with Simplified S-R latch (단순화된 S-R 래치를 이용한 6비트 CMOS 플래쉬 A/D 변환기 설계)

  • Son, Young-Jun;Kim, Won;Yoon, Kwang-Sub
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.33 no.11C
    • /
    • pp.963-969
    • /
    • 2008
  • This paper presents 6bit 100MHz Interpolation Flash Analog-to-Digital Converter, which can be applied to the Receiver of Wireless Tele-communication System. The 6bit 100MHz Flash Analog-to-Digital Converter simplifies and integrates S-R latch which multiplies as the resolution increases. Whereas the conventional NAND based S-R latch needed eight MOS transistors, this Converter was designed with only six, which makes the Dynamic Power Dissipation of the A/D Converter reduced up to 12.5%. The designed A/D Converter went through $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process to be a final product, and the final product has shown 282mW of power dissipation with 1.8V of Supply Voltage, 100MHz of conversion rate. And 35.027dBc, 31.253dB SFDR and 4.8bits, 4.2bits ENOB with 12.5MHz, 50MHz of each input frequency.

Multilayer QCA D-latch design using cell interaction (셀 간 상호작용을 이용한 다층구조 QCA D-래치 설계)

  • Jang, Woo-Yeong;Jeon, Jun-Cheol
    • The Journal of the Convergence on Culture Technology
    • /
    • v.6 no.2
    • /
    • pp.515-520
    • /
    • 2020
  • CMOS used in digital circuit design technology has reached the limit of integration due to quantum tunneling. Quantum-dot cellular automata (QCA), which can replace this, has many advantages such as low power consumption and fast switching speed, so many digital circuits of CMOS have been proposed based on QCA. Among them, the multiplexer is a basic circuit used in various circuits such as D-flip-flops and resistors, and has been studied a lot. However, the existing multiplexer has a disadvantage that space efficiency is not good. Therefore, in this paper, we propose a new multilayered multiplexer using cell interaction and D-latch using it. The multiplexer and D-latch proposed in this paper have improved area, cell count, and delay time, and have excellent connectivity and scalability when designing large circuits. All proposed structures are simulated using QCADesigner to verify operation.

An 8-bit Data Driving Circuit Design for High-Quality Images in Active Matrix OLEDs (고화질 Active Matrix OLED 디스플레이를 위한 8비트 데이터 구동 회로 설계)

  • Jo, Young-Jik;Lee, Ju-Sang;Yu, Sang-Dae
    • Proceedings of the KIEE Conference
    • /
    • 2004.11c
    • /
    • pp.632-634
    • /
    • 2004
  • First for high-qualify images and reducing process-error and driving speed, the designed 8-bit data driving circuit consists of a constant transconductance bias circuit, D-F/Fs by shift registers using static transmission gates, 1st latch and 2nd latch by tristate inverters, level shifters, current steering segmented D/A converters by 4MSB thermometer decoder and 4LSB weighted type. Second, we designed gray amp for power saving. These data driving circuits are designed with $0.35-{\mu}m$ CMOS technologies at 3.3 V and 18 V power supplies and simulated with HSPICE.

  • PDF

A PFD (Phase Frequency Detector) with Shortened Reset time scheme (Reset time을 줄인 Phase Frequency Detector)

  • 윤상화;최영식;최혁환;권태하
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2003.10a
    • /
    • pp.385-388
    • /
    • 2003
  • In this paper, a D-Latch is replaced by a memory cell on the proposed PFD to improve response tine by reducing reset me. The PFD has been simulated using HSPICE with a Hynix 0.35um CMOS process to prove the performance improvement.

  • PDF

Improvement of Power Consumption of Automatic Quiescent Power Cut-off Receptacle by Developing Latch Relay (래치릴레이 개발 및 적용을 통한 대기전력 자동 차단 콘센트의 효율 개선방안 고찰)

  • Kim, Ju-Chul;Lee, Joon-Ho;Kim, Jin-Tai;Kim, Sun-Gu;Lee, Sang-Joong
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.27 no.10
    • /
    • pp.75-79
    • /
    • 2013
  • The automatic quiescent power cut-off receptacles(QPCR from now on) have achieved a noticeable energy saving so far. The government is preparing a new code for wider promotion of the QPCRs. This paper presents a new QPCR that adopts the latch relay instead of the conventional coil-operated relay. Measurement results of the prototype have shown up to 0.22W improvement of quiescent power compared with existing products.

Low Power and Small Area Holding Latch with Level Shifting Function Using LTPS TFTs for Mobile Applications

  • Choi, Jung-Hwan;Kim, Yong-Jae;Ahn, Soon-Sung;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2006.08a
    • /
    • pp.1283-1286
    • /
    • 2006
  • A holding latch with level shifting function is proposed for power and cost effectiveness with low temperature polycrystalline silicon technology on the glass backplane. Layout area and power consumption of the proposed circuit are reduced by 10% and 52% compared with those of the typical structure which combines a static D-latch and a cross coupled level shifter for 2.2" qVGA panel, respectively.

  • PDF

A Study on ESD Protection Circuit with Bidirectional Structure with Latch-up Immunity due to High Holding Voltage (높은 홀딩 전압으로 인한 래치업 면역을 갖는 양방향 구조의 ESD 보호회로에 관한 연구)

  • Jung, Jang-Han;Do, Kyung-Il;Jin, Seung-Hoo;Go, Kyung-Jin;Koo, Yong-Seo
    • Journal of IKEEE
    • /
    • v.25 no.2
    • /
    • pp.376-380
    • /
    • 2021
  • In this paper, we propose a novel ESD protection device with Latch-up immunity properties due to high holding voltages by improving the structure of a typical SCR. To verify the characteristics of the proposed ESD circuit, simulations were conducted using Synopsys TCAD and presented compared to existing ESD protection circuits. Furthermore, the variation of electrical properties was verified using the design variable D1. Simulation results confirm that the proposed ESD protective circuit has higher holding voltage properties and bidirectional discharge properties compared to conventional ESD protective circuits. We validate the electrical properties with post-design TLP measurements using Samsung's 0.13um BCD process. And we verify that the proposed ESD protection circuit in this paper is well suited for high voltage applications in that it has a latch-up immunity due to improved holding voltage through optimization of design variables.