• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.749-752
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• 2014

The device performance of n-channel MuGFET with different fin width, existence of spacer and channel length has been characterized. Tri-Gate structure(fin number=10) has been used. There are four kinds of Tri-Gate with fin width=55nm with spacer, fin width=70nm with spacer, fin width=55nm without spacer, fin width=70nm without spacer. DIBL, subthreshold swing, Vt roll-off, (above Short Channel Effect)and hot carrier stress degradation have been measured. From the experiment results, short Channel Effect with spacer was decreased, hot carrier degradation with spacer and narrow fin width was decreased. Therefore, layout of LDD structure with spacer and narrow fin width is desirable in short channel effect and hot carrier degradation.

• The Journal of the Acoustical Society of Korea
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• v.28 no.7
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• pp.599-609
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• 2009

An overview of the recently finalized multi-channel audio coding standard MPEG Surround is provided. This audio coding standard downmixes multi-channel signals to mono or stereo signals and, simultaneously, extracts spatial parameters for its encoding process. In its decoding process, it reconstructs multi-channel signals based on the downmix signals and spatial parameters. Since the downmix signals are coded in conventional audio coding format such as AAC and MP3 and the spatial parameters require a small amount of information MPEG Surround guarantees high sound quality multi-channel audio at low bit rates. Besides, it is backward-compatible to conventional audio coding techniques because the downmix signals can be played on portable audio devices ignoring the spatial parameter information. In this paper, Part 1 presents an overview of the basic structure of MPEG Surround and Part 2 describes various modes and tools including the binaural mode which supports the virtual 5.1-channel playback via headphones or earphones. The listening test results by various companies and organizations are also presented.

• Proceedings of the KSMRM Conference
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• 2003.10a
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• pp.16-16
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• 2003

Purpose： Recently, a major interesting method of fast MR imaging is sensitivity encoding (SENSE) using arrays of multiple receiver coils. In this study, we have designed and implemented a 4-channel head array coil and optimized the structure and arrangement of the coil to improve the performance.

• ETRI Journal
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• v.34 no.3
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• pp.450-453
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• 2012

IEEE 802.11n standards introduced a mixed-mode format frame structure to achieve higher throughput with multiple antennas while providing backward compatibility with legacy systems. Although multi-input multi-output channel estimation was possible only with high-throughput long training fields (HT-LTFs), the proposed scheme utilizes a legacy LTF as well as HT-LTFs in a decision feedback manner to improve the accuracy of the estimates. It was verified through theoretical analysis and simulations that the proposed scheme effectively enhances the mean square error performance.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2249-2251
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• 2001

This paper proposes that it minimizes interference between link at high speed trajectory tracking of 2-degree parallel link manipulator and QFT(Quantitative Feedback Theory) controller which robust structure uncertainty and disturbance of plant. And using ICD(Individual Channel Design), it separates two channel from multivariable system, parallel link manipulator and designs robust controller with applying MISO QFT to each channel. Finally, we make sure of robustness and excellence of QFT controller through simulation and experiment.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.17-23
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• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• Proceedings of the Korea Water Resources Association Conference
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• 2007.05a
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• pp.253-257
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• 2007

Channel-aquifer interaction is one of the key hydrological processes that determine water flows in the stream/river channel. Field measurements of channel-aquifer interaction, however, is very difficult and costly, particularly when one intends to understand its variations across a catchment for a long period. Hydrological simulations using a catchment model are a relatively easier and cheaper alternative provided the model structure is appropriate for describing channel-aquifer interaction. In this study, a catchment model called CAMEL (Chemicals from Agricultural Management and Erosion Losses) is used for estimating channel-aquifer interaction over time and space. CAMEL is a distributed catchment model to simulate transformation and transport processes of sediment and pollutants as well as water flows at the catchment scale. In the model, a catchment is represented using a network of square columns each of which is comprised of various storages of water. CAMEL explicitly simulates both surface and subsurface processes including channel-aquifer interaction. This paper presents an application study results of CAMEL for the Tarland Burn Catchment, a small (catchment area $52\;km^2$) rural catchment in Scotland, UK, demonstrating some of the channel-aquifer interaction dynamics across the catchment during a 2-year period.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.302.1-302.1
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• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.

• Journal of Microbiology and Biotechnology
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• v.21 no.10
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• pp.1097-1100
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• 2011

A toxin produced by Pseudomonas tolaasii, tolaasin, causes brown blotch disease in mushrooms. Tolaasin forms pores on the cellular membrane and destroys cell structure. Inhibiting the ability of tolaasin to form ion channels may be an effective method to protect against attack by tolaasin. However, it is first necessary to elucidate the three-dimensional structure of the ion channels formed by tolaasin. In this study, the structure of the tolaasin ion channel was determined in silico based on data obtained from nuclear magnetic resonance experiments.