Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2014.10a
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- Pages.749-752
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- 2014
The impact of Spacer on Short Channel Effect and device degradation in Tri-Gate MOSFET
Tri-Gate MOSFET에 SPACER가 단채널 및 열화특성에 미치는 영향
- Baek, Gun-Woo (Inchoen National University) ;
- Jung, Sung-In (Inchoen National University) ;
- Kim, Gi-Yeon (Inchoen National University) ;
- Lee, Jae-Hun (Inchoen National University) ;
- Park, Jong-Tae (Inchoen National University)
- Published : 2014.10.28
Abstract
The device performance of n-channel MuGFET with different fin width, existence of spacer and channel length has been characterized. Tri-Gate structure(fin number=10) has been used. There are four kinds of Tri-Gate with fin width=55nm with spacer, fin width=70nm with spacer, fin width=55nm without spacer, fin width=70nm without spacer. DIBL, subthreshold swing, Vt roll-off, (above Short Channel Effect)and hot carrier stress degradation have been measured. From the experiment results, short Channel Effect with spacer was decreased, hot carrier degradation with spacer and narrow fin width was decreased. Therefore, layout of LDD structure with spacer and narrow fin width is desirable in short channel effect and hot carrier degradation.
Spacer 유무와 핀 폭, 채널길이에 따른 n채널 MuGFET의 단채널 및 열화 특성을 비교 분석 하였다. 사용된 소자는 핀 수가 10인 Tri-Gate이며 Spacer 유무에 따른 핀 폭이 55nm, 70nm인 4종류이다. 측정한 소자 특성은 DIBL, subthreshold swing, 문턱전압 변화 (이하 단채널 현상)과 소자열화이다. 측정 결과, 단채널 현상은 spacer가 있는 것이 감소하였고, hot carrier degradation은 spacer가 있고 핀 폭이 작은 것이 소자열화가 적었다. 따라서, spacer가 있는 LDD(Lightly Doped Drain) 구조이며 핀 폭이 작은 설계방식이 단채널 현상 및 열화특성에 더욱 바람직하다.