Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Switching Characteristics due to the Impurity Concentration and the Channel Length in Lateral MOS-controlled Thyristor

수평 구조의 MOS-controlled Thyristor에서 채널에서의 길이 및 불순물 농도에 의한 스위칭 특성

  • 김남수 (충북대학교 전기전자공학부) ;
  • 최지원 (충북대학교 전기전자공학부) ;
  • 이기영 (충북대학교 전기전자공학부) ;
  • 주병권 (한국과학기술연구원 마이크로시스템) ;
  • 정태웅 (충북대학교 전기전자공학부)
  • Published : 2005.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

Keywords

References

  1. Mohan, Undeland, and Robbins, 'Power Electronics', Wiley, 2nd ed., p. 505, 1995
  2. B. J. Baliga, 'The future of power semiconductor device technology', Proceedings of the IEEE, Vol. 89, p. 822, 2001
  3. V. A. K. Temple, 'MOS-controlled Thyristor', IEEE Int. on Electron Devices Meeting, p. 282, 1984
  4. V. A. K. Temple, 'MOS-controlled Thyristor - A New Class of Power Devices', IEEE Trans. on Electron Devices, ED-33, p. 1609, 1986
  5. Mohamed N. Darwish, 'Lateral MOS-gate power devices - A unified view', IEEE Trans. Electron Device, Vol. ED-38, p. 1600, 1991
  6. B. J. Baliga, 'Power integrated circuits - A brief overview', IEEE Trans. on Electron Devices, Vol. ED-33, p. 1936, 1986
  7. Seong-Dong Kim, Han-Soo Kim, Yern-Ik Choi, Byung-Ha Kim, and Min-Koo Han, 'A lateral MOS controlled thyristor with shorted anode structure', in Proc. of 1995 IEEE Int. Conf. Power Electronics and Drive Systems. p. 82, 1995
  8. Mohamed N. Darwish, 'A new lateral MOS-controlled thyristor', IEEE Trans, Electron Device Letter, Vol. EDL -11, p. 256, 1990
  9. R. A. Serway, 'Physics', Saunders, p. 524, 1982
  10. Sedra and Smith, 'Microelectronics Circuits', Saunders, 3rd ed., p. 912, 1991