• 한국전기화학회:학술대회논문집
• /
• 2004.04a
• /
• pp.27-27
• /
• 2004

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.4 s.33
• /
• pp.13-22
• /
• 2004

In MEMS devices, packaging induced stress or stress induced structure deformation become increasing concerns since it directly affects the performance of the device. In this paper, deformation behavior of MEMS gyroscope package subjected to temperature change is investigated using high-sensitivity moire interferometry. Using the real-time moire setup, fringe patterns are recorded and analyzed at several temperatures. Temperature dependent analyses of warpages and extensions/contractions of the package are presented. Linear elastic behavior is documented in the temperature region of room temperature to $125^{\circ}C$. Analysis of the package reveals that global bending occurs due to the mismatch of thermal expansion coefficient between the chip, the molding compound and the PCB. Detailed global and local deformations of the package by temperature change are investigated, concerning the variation of natural frequency of MEMS gyro chip.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.05a
• /
• pp.1021-1022
• /
• 2010

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.3
• /
• pp.299-304
• /
• 2004

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40％, and the superior anisotropic cross section was observe

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.868-871
• /
• 2003

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability. Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of $1000^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using $SF_6/O_2$ and $CF_4/O_2$ gas mixture. Etch rate have been investigated as a function of oxygen concentration in the gas mixture, RF power, and working pressure. Etch rate was measured by surface profiler and FE-SEM. $SF_6/O_2$ gas mixture has been shown high etch rate than $CF_4/O_2$ gas mixture. Maximum etch rate appeared at 450W of RF power. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40%, and the superior anisotropic cross section was observed.

• Proceedings of the KSME Conference
• /
• 2003.11a
• /
• pp.1407-1412
• /
• 2003

In MEMS devices, packaging induced stress or stress induced structure deformation become increasing concerns since it directly affects the performance of the device. In this paper, deformation behavior of MEMS gyroscope package subjected to temparature change is investigated using high-sensitivity $Moir{\acute{e}}$ interferometry. Using the real-time $Moir{\acute{e}}$ setup, fringe patterns are recorded and analyzed at several temperatures. Temperature dependent analyses of warpages and extensions/contractions of the package are presented. Linear elastic behavior is documented in the temperature region of room temperature to $125^{\circ}C$. Analysis of the package reveals that global bending occurs due to the mismatch of thermal expansion coefficient between the chip, the molding compond and the PCB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.8
• /
• pp.700-704
• /
• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.

• Journal of Korea Society of Digital Industry and Information Management
• /
• v.18 no.4
• /
• pp.47-54
• /
• 2022

In this paper, MEMS embedded system design implemented the sensor events via analyzing the characteristics that dynamically happened to an abnormal status in power IoT environments in order to guarantee a maintainable operation. We used three kinds of tools in this paper, at first Bluetooth Low Energy (BLE) technology which is a suitable protocol that provides a low data rate, low power consumption, and low-cost sensor applications. Secondly LSM6DSOX, a system-in-module containing a 3-axis digital accelerometer and gyroscope with low-power features for optimal motion. Thirdly BM1422AGMV Digital Magnetometer IC, a 3-axis magnetic sensor with an I2C interface and a magnetic measurable range of ±120 uT, which incorporates magneto-impedance elements to detect the magnetic field when the current flowed in the power devices. The proposed MEMS system was developed based on an nRF5340 System on Chip (SoC), previously compared to the standalone embedded system without bluetooth technology via mobile App. And also, MEMS embedded system with BLE 5.0 technology broadcasted the MEMS system status to Android mobile server. The experiment results enhanced the performance of MEMS system design by combination of sensors, BLE technology and mobile application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.408-409
• /
• 2006

The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1. 3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film. was analyzed by XPS. Residual strain was investigated by Raman scattering. The surface morphology and voids between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.5
• /
• pp.232-237
• /
• 2005

In this paper, we fabricated $CO_2$ gas sensor based on the MEMS infrared sensor and characterized its electrical and $CO_2$-sensing properties. The fabricated $CO_2$ gas sensor by MEMS technique has many advanges over NDIR(nondispersive) $CO_2$ sensor such as monolithic fabrication, very high selectivity on $CO_2$, low power consumption and compact system. Microbolometer by surface micromachining was fabricated for gas detector and $CO_2$ filter chip by bulk micromachining was fabricated for signal referencing. By using the proposed and fabricated gas sensor, we are expected to measure $CO_2$ concentration more accurately with high reliability.