Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Reactive ion Etching Characterization of SiC Film Deposited by Thermal CVD Method for MEMS Application

MEMS 적용을 위한 Thermal CVD 방법에 의해 증착한 SiC막의 반응성 이온 Etching 특성 평가

  • 최기용 (한국과학기술연구원 마이크로시스템연구센터) ;
  • 최덕균 (한양대학교 세라믹공학과) ;
  • 박지연 (한국원자력연구소) ;
  • 김태송 (한국과학기술연구원 마이크로시스템연구센터)
  • Published : 2004.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40％, and the superior anisotropic cross section was observe

Keywords

References

  1. 전기전자재료학회논문지 v.4 no.4 실리콘 카바이드 박막제조를 위한 증착 반응연구 고준호;우성일
  2. Thin Solid Films v.355/356 SiC MEMS : opportunities and challenges for applications in harsh enviromments M.Mehregany;C.A.Zorman https://doi.org/10.1016/S0257-8972(99)00374-6
  3. Sen. Actuators A v.82 Silicon carbide as a new MEMS technology P.M.Sarro https://doi.org/10.1016/S0924-4247(99)00335-0
  4. IEEE Electron Device Lett. v.EDL-15 RF performance of SiC MESFET's on high resistivity substrates S.Sriram;R.C.Clarke;A.A.Burk,Jr.;H.M.Hobgood;P.G.McMullin;P.A.Orphanos;R.R.Siergiej;T.J.Smit;C.D.Brandt;M.C.Driver;R.H.Hopkins
  5. Appl. Phys. Lett. v.67 Low damage and residue-free dry etching of 6H-SiC using electron cyclotron resonance plasma K.Xie;J.R.Femish;J.H.Zhap;W.R.Buchwald;L.Cacas https://doi.org/10.1063/1.114631
  6. Phys. Stat. Sol. (b) v.202 A review of SiC reactive ion etching in fluorinated plasmas P.H.Yih;V.Saxena;A.J.Steck https://doi.org/10.1002/1521-3951(199707)202:1<605::AID-PSSB605>3.0.CO;2-Y
  7. Kyoto, Japan, Ser, no.142 Silicon Carbide and related Materials, International Physics Conference M.G.Rastegaeva;A.N.Andreev;V.V.Zelenin;A.I.Bahanin;I.P.Nikitina;V.E.Chelnokov;V.P.Rastegaev
  8. Appl. Phys. Lett. v.76 High rate etching of 4H-SiC using a $SF_6$/O₂helicon plasma P.Chabert;N.Proust;J.Perrin;R.W.Boswell https://doi.org/10.1063/1.126329
  9. 전기전자재료학회논문지 v.15 no.11 Shigehiro Nishino, "Si(100)기판 위에 성장된 3C-SiC 박막의 물리적 특성 정귀상;정연식
  10. J. Vac. Sci. Technol. B v.4(1) Reactive ion etching of sic thin films using fluorinated gases J.Sugiura;W.J.Lu;K.C.cadien;A.J.steckl https://doi.org/10.1116/1.583329
  11. J. Vac. Sci. Technol. B v.19 Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms Chabert,P. https://doi.org/10.1116/1.1387459

Cited by

  1. Preparation and application of the 3C–SiC substrate to piezoelectric micro cantilever transducers vol.108, pp.1, 2012, https://doi.org/10.1007/s00339-012-6866-x