• Title/Summary/Keyword: Atomic Layer Deposition(ALD)

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Intelligent Energy Harvesting Power Management and Advanced Energy Storage System (지능형 에너지 저장시스템과 ESS 개발을 위한 소재 및 공정 기술)

  • Heo, Kwan-Jun;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.7
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    • pp.417-427
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    • 2014
  • Renewable energy sources such as solar, wind and hydro provides utilizing renewable power and reduce the using fossil fuels. On the other hand, it is too critical to apply power system due to the intermittent nature of renewable energy sources, the continuous fluctuations of the power load, and the storage with high energy density. Energy storage system, including pumped-hydroelectric energy storage, compressed-air energy storage, superconducting magnetic energy storage, and electrochemical devices like batteries, supercapacitors and others have shown that solve some of the challenges. In this paper, we review the current state of applications of energy storage systems, and atomic layer deposition technology, graphene materials on the energy storage systems and processes.

Facile Modulation of Electrical Properties on Al doped ZnO by Hydrogen Peroxide Immersion Process at Room Temperature

  • Park, Hyun-Woo;Chung, Kwun-Bum
    • Applied Science and Convergence Technology
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    • v.26 no.3
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    • pp.43-46
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    • 2017
  • Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

The Precursor Ratio Effects on the Electrical and Optical Properties of the ZnO:Al Transparent Conducting Oxide Grown by ALD Method

  • Kwon, Sang-Jik;Lee, Hyun-Jae;Jeong, Hak-June;Seo, Yong-Woon;Jeong, Heui-Seob;Hwang, Man-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.924-927
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    • 2003
  • Aluminium-doped ZnO (ZnO:Al) films were grown by atomic layer-controlled deposition on glass substrates at temperature of 200 $^{\circ}C$ using diethylzinc($Zn(C_{2}H_{2})_{2}$; DEtZn), water($H_{2}O$) and trimethylaluminium ($Al(CH_{3})_{3}$; TMA) as precursors. As the cycle ratio of TMA to DEZn(TMA/DEZn) increased, the resistivity of the films decreased and the roughness increased. In the case of TMA/DEZn pulse ratio of 1 to 10, the film had a resistivity of $9.7{\times}l0^{-4}{\Omega}{\cdot}cm$ and a roughness of 2.25nm(rms), while in the case of only DEZ injection the film had a resistivity of $3.5{\times}10^{-3}{\Omega}{\cdot}cm$ and a roughness of 1.07nm(rms)

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Characterization of reactive sputtering TaN fate electrode on $HfO_2$ dielectrics ($HfO_2$ dielectrics를 이용한 reactive sputtering TaN gate electrode 의 특성분석)

  • Kim Youngsoon;Lee Taeho;Ahn Jinho
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.185-190
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    • 2003
  • 고유전물질인 $HfO_2$ 극박막에 사용될 TaN metal 전극에 대한 특성에 대한 연구를 하였다. 고유전물질인 $HfO_2$는 4" p-type wafer를 SCI cleaning후 ALD(atomic layer deposition)을 통해 $50\AA$를 증착하였다. Ff source는 TEMAH를 이용하였으며 Oxygen source는 $H_2O$를 이용하였다. 이렇게 증착한 $HfO_2$ 극박막에 Ta target을 이용하여 질소 가스를 Ar가스에 첨가하여 reactive sputtering을 통해서 TaN 전극을 증착하였다. TaN 박막의 증착두께는 a--step과 TEM을 통해서 확인하였으며 면저항은 four point probe를 이용하여 측정하였다. 이렇게 증착된 $HfO_2/TaN$구조에 대한 전기적 특성을 측정하였다.

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Structure and chemical properties of TiO2 surfaces on C fiber

  • Kim, Myoung-Joo;Kim, Kwang-Dae;Dey, Nilay Kumar;Seo, Hyun-Ook;Kim, Dong-Wun;Jeong, Myoung-Geun;Kim, Young-Dok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.81-81
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    • 2010
  • Growth of TiO2 films prepared by atomic layer deposition (ALD) was studied on C fiber. Moreover, adsorption and photocatalytic decomposition of methylene blue on TiO2 thin films were studied. Preferential growth of TiO2 on steps of C surfaces could be identified by scanning electron microscopy (SEM). X-ray Photoelectron Spectroscopy (XPS) showed thickness-dependent positive core level shift of Ti, which can be interpreted in terms of enhanced final state charging for thicker films. Adsorption and photocatalytic behaviors of TiO2 thin films will be discussed in this poster.

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CdSe/CdS QDSSC에서 $TiO_2$ 증착 효과

  • Park, Jin-Ju;Lee, Seung-Hyeop;Seol, Min-Su;Kim, Hui-Jin;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.380-380
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    • 2011
  • ZnO 나노라드 위에 양자점을 증착한 후 그 위에 $TiO_2$를 ALD방법으로 증착하여 그 passivation 효과가 solar cell 효율에 미친 영향에 대한 실험을 진행하였다. Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 성장시킨다. 여기에 SILAR 방법을 거쳐서 CdS 양자점을 증착시키고, 후에 CBD를 이용하여 CdSe 양자점을 증착시킨다. 여기에 마지막으로 amorphous $TiO_2$로 표면을 덮는 과정을 거치는데, $TiO_2$가 ZnO 라드 위에 균일하고 정밀하게 증착되도록 하기 위해서 Atomic Layer Deposition을 이용하였다. 다양한 분석 방법을 통해 $TiO_2$/CdSe/CdS/ZnO 구조를 조사하였으며, ZnO 나노라드 위에 $TiO_2$가 정교하게 올라간 것을 확인한 후에 solar cell에 적용하여 그 효율을 확인하였다.

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ZnO-based thin-film transistor inverters using top and bottom gate structures

  • Oh, Min-Suk;Kim, Yong-Hoon;Park, Sung-Kyu;Han, Jeong-In;Lee, Ki-Moon;Im, Seong-Il;Lee, Byoung-H.;Sung, Myung-M.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.461-463
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    • 2009
  • We report on the fabrication of ZnO-based thin-film transistor (TFT) inverters with top and bottom gate structures with $Al_2O_3$ dielectrics grown by atomic layer deposition (ALD). Since the top gate ZnO-based TFT showed somewhat lower field effect mobility than that of the bottom gate device, our ZnO-based TFT inverters were designed with identical dimensions for both channels. This TFT inverter device demonstrated an high voltage gain at a low supply voltage of 5 V and clear dynamic behavior.

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The Study of Hafnium Silicate by NO Gas Annealing Treatment (NO gas 후속 열처리를 통한 Hf-silicate에 대한 연구)

  • Cho, Young-Dae;Seo, Dong-Chan;Ko, Dae-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.117-117
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    • 2007
  • The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.

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Photocatalytic activity of various $TiO_2$ nanostructures

  • Kim, Myoung-Joo;Kim, Kwang-Dae;Tai, Wei-Sheng;Seo, Hyun-Ook;Luo, Yuan;Kim, Young-Dok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.34-34
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    • 2010
  • Activities of various $TiO_2$ nanostructures in photocatalytic decomposition of methylene blue and toluene were determined in order to shed light on the relationship between structures and photocatalytic activity. Commercially available P-25 samples were used in the present work. In addition, $TiO_2$ nanostructures were synthesized using atomic layer deposition (ALD). We show that change in the surface structure of $TiO_2$ upon variois surface treatments results in variation in photocatalytic activity. In particular, increase in the number of OH groups on the surface leads to the enhancement in photocatalytc activity. Surface OH groups increases adsorption reactivity of organic reactants, thereby increasing activity in photocatalytic decomposition of methylene blue and toluene.

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Ca-test에 의한 유기발광소자 봉지용 분자층 증착 Alucone 박막의 투과 방지 특성

  • O, Seung-Sik;Park, Min-U;Park, Geun-Hui;Yeo, Dong-Hyeon;Jeong, Dong-Geun;Park, Jin-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.401-401
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    • 2012
  • 유기발광소자는 유연 소자로의 적용, 자체 발광 등의 장점으로 차세대 디스플레이로서 각광받고 있다. 하지만 유기발광소자는 유기물을 발광층으로 하고 있기 때문에 수분에 취약하다는 단점이 있다. 그래서 봉지 기술(encapsulation)을 필요로 한다. 널리 알려진 방법으로는 유리로 소자를 감싸고 내부에 흡습제를 충진하여 수분 투습을 줄일 수 있다. 하지만 위 기술을 사용할 경우 유기발광소자의 장점인 유연 소자의 적용이 어렵다. 따라서 박막 봉지 기술을 이용하면 보다 얇은 두께의 소자 제작이 가능하고 유연 소자의 적용 역시 가능해진다. 박막 코팅을 이용한 봉지 기술 중 화학적 증착법(Chemical Vapor Deposition, CVD)이나 물리적 증착법(Physical Vapor Deposition, PVD)을 이용하는 방법이 널리 알려져 있지만 원자층 증착법(Atomic Layer Deposition, ALD)을 이용하면 보다 낮은 두께의 치밀한 박막을 제작 할 수 있다. 본 연구는 원자층 증착법을 응용한 분자층 증착법(Molecular Layer Deposition, MLD)을 이용하여 Trimethylaluminum과 Ethylene glycol을 순차적으로 주입함으로써 Alucone 유기 박막을 제작하고 유기발광소자의 봉지 기술로의 적용을 위해 투과 방지막 특성에 관하여 분석했다. 박막 봉지 기술로서 적용하기 위해 제작된 투과 방지막은 원자층 증착법으로 Al2O3무기 박막을 제작하고 분자층 증착법으로 Alucone 박막을 순차적으로 증착하였다. 이를 Ca를 이용하여 전도도를 측정하고, 투습도를 계산하여 투과 방지막 특성을 분석하였다. Alucone 박막은 우수한 투과 방지막 특성을 가지지는 못하지만 적층 구조로 제작함으로써 두 쌍의 Alucone/Al2O3일때, $6.07{\times}10^{-2}g/m^2day$의 투습도를 보여주고 있다. Alucone 박막의 존재는 수분이나 산소의 투과 경로 길이를 늘려줌으로써 Alucone/Al2O3 박막의 투과방지 특성이 향상되는 것으로 사료된다.

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