Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.117-117
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- 2007
The Study of Hafnium Silicate by NO Gas Annealing Treatment
NO gas 후속 열처리를 통한 Hf-silicate에 대한 연구
- Cho, Young-Dae (Yonsei Univ.) ;
- Seo, Dong-Chan (Yonsei Univ.) ;
- Ko, Dae-Hong (Yonsei Univ.)
- Published : 2007.11.01
Abstract
The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.