• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.117-117
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• 2007

The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.116-116
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• 2007

We investigated the characteristics of the Hafnium silicate (Hf-silicate) film which is grown by ALD (atomic layer deposition). The Hf-silicate films that were annealed by the RTP. The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas and $NH_3$ gas annealing, were investigated by XPS, TEM and I-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The tendency of nitnitridation in NO gas and $NH_3$ is different. Leakage current is improved in post NO gas annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• Journal of Magnetics
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• v.11 no.3
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• pp.103-107
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• 2006

In grain oriented electrical steel process, hot band annealing has thought to be essential for obtaining good magnetic properties. New hot rolling method of heavy reduction in early hot rolling stage was applied to obtain good magnetic properties in GO process without hot band annealing. Hot rolling was carried out by varyinghot rolling reduction distribution along hot rolling pass. The heavy hot rolling reduction in rear stand improves the magnetic flux density in the case of no hot band annealing. The hot band specimens of the heavy reduction in front stand shows the elongated hot deformed microstructures in the center layer and strong {001}<110> texture.On the contrary, the heavily reduced specimens in rear stand shows the recrystallization in the center layer of hot band and strong {111}<112> and {110}<001> textures.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.97-101
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• 2004

W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.

• Carbon letters
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• v.14 no.3
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• pp.186-189
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• 2013

We report a highly sensitive $NO_2$ gas sensor based on multi-layer graphene (MLG) films synthesized by a chemical vapor deposition method on a microheater-embedded flexible substrate. The MLG could detect low-concentration $NO_2$ even at sub-ppm (<200 ppb) levels. It also exhibited a high resistance change of ~6% when it was exposed to 1 ppm $NO_2$ gas at room temperature for 1 min. The exceptionally high sensitivity could be attributed to the large number of $NO_2$ molecule adsorption sites on the MLG due to its a large surface area and various defect-sites, and to the high mobility of carriers transferred between the MLG films and the adsorbed gas molecules. Although desorption of the $NO_2$ molecules was slow, it could be enhanced by an additional annealing process using an embedded Au microheater. The outstanding mechanical flexibility of the graphene film ensures the stable sensing response of the device under extreme bending stress. Our large-scale and easily reproducible MLG films can provide a proof-of-concept for future flexible $NO_2$ gas sensor devices.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1369-1376
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• 1995

The WO3 thin-film NOx sensor which is of practical use and includes the heater and the temperature sensor was fabricated. The WO3 thin films as a gas-sensing layer was deposited at ambient temperature in a high-vacuum resistance heated evaporator. The highest sensitivity of the WO3 thin-film sensor to NOx was obtained under the condition of the annealing temperature of 50$0^{\circ}C$ and the operating temperature of 30$0^{\circ}C$. The gas sensing characteristics of this sensor was excellent, i.e. high sensitivity (Rgas/Rair in 3 ppm NO2=53) and fast response time (4 seconds).

• Journal of Sensor Science and Technology
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• v.13 no.6
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• pp.424-429
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• 2004

$Cr_{2}O_{3}$ thick films were fabricated by screen printing method on alumina substrates and annealed at $700^{\circ}C$, $800^{\circ}C$, and $900^{\circ}C$ in air, respectively. Structural properties examined by XRD and SEM showed (116) dominant $Cr_{2}O_{3}$ peak and increased grain sizes with the annealing. The resistance of the films decreased with increasing the annealing temperature. Gas sensing characteristics to $NH_{3}$, CO, $C_{4}H_{10}$, and NO gases showed sensitivity only to $NH_{3}$ gas. $Cr_{2}O_{3}$ thick films annealed at $700^{\circ}C$ had the sensitivity of about 15 % for 100 ppm $NH_{3}$ gas at the working temperature of $300^{\circ}C$. The thick films had good selectivity to the $NH_{3}$ gas. The response time to $NH_{3}$ gas was about 10 seconds.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.348-348
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• 2010

Behaviors of $TiO_2$-based photocatalysts with different surface structures on the removal of gas-phase toluene with and without UV irradiation are reported. P-25(Degussa) $TiO_2$ powder dispersed in distilled water by sonication was deposited on the transparent glasses and then dried. Some of the samples were further annealed in oven for 1 hr. These samples obtained before and after annealing were characterized by Brunauer- Emmett-Teller (BET), Transmission Electron Microscope (TEM), X-ray Photoelectron Spectroscopy (XPS) and Fourier Transform Infrared (FT-IR) spectrometry, respectively. Based on BET and TEM data, no significant structural change upon annealing could be identified. However, the sample without annealing showed a significantly higher ability for removing toluene both in the presence and absence of the UV light. XPS and FT-IR results clearly revealed that the population of the OH groups on the surface of $TiO_2$ was higher for the sample without annealing, indicating that the OH groups can enhance the adsorption capacity and photocatalytic activity of $TiO_2$ for the removal of the gas-phase toluene.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.105-105
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• 2011

ZnO is a promising material since it could be applied to many fields such as solar cells, laser diodes, thin films transistors and gas sensors. ZnO has a wide and direct band gap for about 3.37 eV at room temperature and a high exciton binding energy of 60 meV. In particular, ZnO features high sensitivity to toxic and combustible gas such as CO, NOX, so on. The development of gas sensors to monitor the toxic and combustible gases is imperative due to the concerns for enviromental pollution and the safety requirements for the industry. In this study, we investigated the effect of substrate temperature and post-annealing on structural and electrical properties of ZnO thin films. ZnO thin films were deposited by pulsed laser deposition (PLD) at various temperatures at from room temperature to $600^{\circ}C$. After that, post-annealing were performed at $600^{\circ}C$. To inspect the structural properties of the deposited ZnO thin films, X-ray diffraction (XRD) was carried out. For gas sensors, the morphology of the films is dominant factor since it is deeply related with the film surface area. Therefore, the atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM) were used to observe the surface of the ZnO thin films. Furthermore, we analyzed the electrical properties by using a Hall measurement system.