한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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ZnO-based thin-film transistor inverters using top and bottom gate structures

  • Oh, Min-Suk (Flexible Display Research Center, Korea Electronics Technology Institute) ;
  • Kim, Yong-Hoon (Flexible Display Research Center, Korea Electronics Technology Institute) ;
  • Park, Sung-Kyu (Flexible Display Research Center, Korea Electronics Technology Institute) ;
  • Han, Jeong-In (Flexible Display Research Center, Korea Electronics Technology Institute) ;
  • Lee, Ki-Moon (Institute of Physics and Applied Physics, Yonsei University) ;
  • Im, Seong-Il (Institute of Physics and Applied Physics, Yonsei University) ;
  • Lee, Byoung-H. (Department of Chemistry, Hanyang University) ;
  • Sung, Myung-M. (Department of Chemistry, Hanyang University)
  • Published : 2009.10.12
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Abstract

We report on the fabrication of ZnO-based thin-film transistor (TFT) inverters with top and bottom gate structures with $Al_2O_3$ dielectrics grown by atomic layer deposition (ALD). Since the top gate ZnO-based TFT showed somewhat lower field effect mobility than that of the bottom gate device, our ZnO-based TFT inverters were designed with identical dimensions for both channels. This TFT inverter device demonstrated an high voltage gain at a low supply voltage of 5 V and clear dynamic behavior.

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